SOZZI, Giovanna
 Distribuzione geografica
Continente #
NA - Nord America 2.849
EU - Europa 2.257
AS - Asia 1.439
SA - Sud America 116
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 2
Totale 6.687
Nazione #
US - Stati Uniti d'America 2.800
CN - Cina 852
IT - Italia 456
SG - Singapore 419
IE - Irlanda 416
SE - Svezia 372
DE - Germania 239
FI - Finlandia 235
UA - Ucraina 172
NL - Olanda 106
BR - Brasile 103
TR - Turchia 70
AT - Austria 58
CA - Canada 47
VN - Vietnam 45
RU - Federazione Russa 44
GB - Regno Unito 41
BE - Belgio 35
RO - Romania 21
CZ - Repubblica Ceca 18
ID - Indonesia 16
FR - Francia 15
SK - Slovacchia (Repubblica Slovacca) 10
CI - Costa d'Avorio 8
EU - Europa 8
PL - Polonia 7
AR - Argentina 4
BD - Bangladesh 4
IL - Israele 4
IN - India 4
HK - Hong Kong 3
JP - Giappone 3
MA - Marocco 3
PK - Pakistan 3
CM - Camerun 2
IM - Isola di Man 2
IQ - Iraq 2
IR - Iran 2
KZ - Kazakistan 2
LT - Lituania 2
LU - Lussemburgo 2
LV - Lettonia 2
TW - Taiwan 2
UY - Uruguay 2
UZ - Uzbekistan 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
BO - Bolivia 1
CH - Svizzera 1
CL - Cile 1
CO - Colombia 1
DK - Danimarca 1
DZ - Algeria 1
EC - Ecuador 1
HN - Honduras 1
HR - Croazia 1
HU - Ungheria 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
ZA - Sudafrica 1
Totale 6.687
Città #
Dublin 414
Chandler 405
Santa Clara 360
Singapore 270
Ann Arbor 238
Parma 233
Jacksonville 207
Ashburn 197
Boardman 130
Dearborn 129
Beijing 111
Nanjing 105
Guangzhou 94
Shanghai 87
Princeton 79
Wilmington 70
Helsinki 57
Stuttgart 50
Leesburg 49
Izmir 48
Vienna 47
Council Bluffs 45
Dong Ket 44
Shenyang 40
San Mateo 39
Nanchang 31
Seattle 30
Brussels 29
Houston 29
Moscow 29
New York 29
Jinan 28
Toronto 28
Hebei 25
Tianjin 25
Los Angeles 23
Kunming 21
Woodbridge 21
Jiaxing 20
Des Moines 19
Fremont 18
Milan 18
Hefei 16
Piacenza 16
Jakarta 15
Ottawa 15
Hangzhou 14
Kocaeli 13
Changsha 11
Cremona 11
Rome 11
Bratislava 10
Halle 10
Bologna 9
Dallas 9
Norwalk 9
Abidjan 8
Frankfurt am Main 8
Munich 8
Reggio Emilia 8
Timisoara 8
Campogalliano 7
Istanbul 7
Brno 6
Ningbo 6
Prata Di Pordenone 6
São Paulo 6
Taiyuan 6
Warsaw 6
Borås 5
Bremen 5
Falkenstein 5
Fidenza 5
Fuzhou 5
Grafing 5
Haikou 5
Marseille 5
Modena 5
Salò 5
Taizhou 5
Ansbach 4
Düsseldorf 4
Focsani 4
Horia 4
Kyjov 4
Nuremberg 4
Pianoro 4
Redwood City 4
Washington 4
Amsterdam 3
Auburn Hills 3
Belo Horizonte 3
Borgonovo Val Tidone 3
Bosco Chiesanuova 3
Brasília 3
Campinas 3
Collecchio 3
Fairfield 3
Genoa 3
Hong Kong 3
Totale 4.354
Nome #
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 266
Analysis of Ga grading in CIGS absorbers with different Cu content 222
Development of a PV modules soiling monitoring system for smart maintenance 148
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 146
Smart soiling sensor for PV modules 140
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects 127
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs 122
Designing CIGS solar cells with front-side point contacts 119
Temperature-dependent breakdown and hot carrier stress of PHEMTs 107
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 101
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 98
Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma 95
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 95
A software tool for thermal simulation and rating evaluation of high power silicon devices 94
The role of defects on forward current in 4h-sic p-i-n diodes 94
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 94
Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells 94
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 93
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 89
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 89
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study 89
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 86
Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells 86
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating 86
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 86
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact 84
High reliable high power diode for welding applications 82
A new silicon resistor technology for very high power snubbers 81
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 81
Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance 81
Physical investigation of trap-related effects in power HFETs and their reliability implications 80
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 78
Local Power Distribution—A Review of Nanogrid Architectures, Control Strategies, and Converters 78
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 77
Electro-thermal simulation of semiconductor devices and hybrid circuits 76
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 76
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 75
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 74
Simulation of the effect of grain-boundaries in backside-passivated CIGS solar cells 74
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 73
Simulazione termoelettrica e prove di vita accelerate di diodi PiN per elevate potenze 73
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances 73
Compact thermal modeling of GaN-Based Structures using Spice. 73
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects 73
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 72
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 72
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer 72
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 71
On the effect of KInSe2 (KIS) layer on Cu In Ga Se 2 solar cell performance: a numerical study 71
Modeling of thin-film Cu(In,Ga)Se2 solar cells 70
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 70
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 68
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 68
null 67
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments 67
Numerical simulation of grain boundaries in cadmium telluride solar cells 66
Impact of front-side point contact/passivation geometry on thin-film solar cell performance 66
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 65
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 65
Lumped element thermal modeling of GaN-based HEMTs 65
Finite-element thermal modeling of GaN-based HEMT structures 64
Gate-lag effects in AlGaAs/GaAs power HFET’s 64
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 64
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC 64
Hybrid large-signal/lumped-element electro-thermal modeling of GaN-HEMTs 63
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 63
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells 63
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 62
On the combined effects of window/buffer and buffer/absorber conduction-band offsets, buffer thickness and doping on thin-film solar cell performance 61
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 61
Surface-related kink effect in AlGaAs/GaAs power HFETs 61
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 60
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells 60
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 58
Numerical investigation of high-field degradation of power HFETs 55
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 49
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 49
Investigating Mesa Structure Impact on C-V Measurements 49
Interpretation of admittance signatures in Cu(In,Ga)Se2 solar cells 48
Electro-thermal simulation of press-pack silicon resistors for high power application 47
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 45
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 43
Empirical investigation on device-degradation indicators under nonlinear dynamic regime 42
Measurement of the thermal resistance of AlGaN/GaN HEMTs 41
Differences of CIGS cell performance with Zn(O, S)/(Zn, Mg)O or CdS/i-ZnO buffers system explored by numerical simulations 36
Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin-Film Solar Cells 35
Revani diffusion model in Cu(In,Ga)Se2 26
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 23
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 18
Tuning the (Zn,Mg)O Layer Thickness for Improved Efficiency in CIGS Solar Cells with Zn(O,S) Buffer: A Numerical Investigation 16
Color-Performance Dynamics in CIGS Solar Cells with Varied ITO and Zn(O,S) Layer Thickness Explored by Numerical Simulations 14
Totale 6.927
Categoria #
all - tutte 26.204
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.204


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020163 0 0 0 0 0 0 0 0 0 83 28 52
2020/2021662 10 52 45 35 85 65 58 30 125 39 55 63
2021/2022482 15 22 77 32 38 15 36 52 23 25 17 130
2022/20231.636 193 152 110 112 126 208 7 123 509 11 58 27
2023/2024651 46 55 14 33 47 139 88 44 17 32 38 98
2024/20251.561 105 112 147 109 218 292 80 110 209 179 0 0
Totale 6.927