IRIS
SOZZI, Giovanna
 Distribuzione geografica
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Continente #
NA - Nord America 5.540
AS - Asia 3.963
EU - Europa 2.958
SA - Sud America 511
Continente sconosciuto - Info sul continente non disponibili 266
AF - Africa 185
OC - Oceania 5
Totale 13.428
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Nazione #
US - Stati Uniti d'America 5.386
SG - Singapore 1.266
CN - Cina 1.262
IT - Italia 712
VN - Vietnam 614
IE - Irlanda 419
SE - Svezia 395
BR - Brasile 365
DE - Germania 306
HK - Hong Kong 288
FI - Finlandia 251
UA - Ucraina 183
GB - Regno Unito 141
FR - Francia 131
ZA - Sudafrica 131
NL - Olanda 119
BD - Bangladesh 111
CA - Canada 98
TR - Turchia 95
AT - Austria 66
IN - India 62
RU - Federazione Russa 60
AR - Argentina 55
IQ - Iraq 50
PL - Polonia 38
BE - Belgio 37
JP - Giappone 30
ID - Indonesia 26
KR - Corea 25
MX - Messico 24
EC - Ecuador 23
PK - Pakistan 22
RO - Romania 22
CZ - Repubblica Ceca 19
CO - Colombia 18
VE - Venezuela 17
ES - Italia 15
CL - Cile 14
MA - Marocco 14
PH - Filippine 14
CR - Costa Rica 11
SA - Arabia Saudita 11
SK - Slovacchia (Repubblica Slovacca) 10
UZ - Uzbekistan 10
CI - Costa d'Avorio 9
TH - Thailandia 9
EU - Europa 8
JO - Giordania 7
KE - Kenya 7
MY - Malesia 7
DZ - Algeria 6
OM - Oman 6
PE - Perù 6
UY - Uruguay 6
AL - Albania 5
IL - Israele 5
KZ - Kazakistan 5
LT - Lituania 5
TW - Taiwan 5
AE - Emirati Arabi Uniti 4
AZ - Azerbaigian 4
EE - Estonia 4
JM - Giamaica 4
PY - Paraguay 4
TN - Tunisia 4
AU - Australia 3
BB - Barbados 3
BO - Bolivia 3
CH - Svizzera 3
EG - Egitto 3
GE - Georgia 3
HN - Honduras 3
HU - Ungheria 3
KG - Kirghizistan 3
NG - Nigeria 3
PA - Panama 3
PS - Palestinian Territory 3
BH - Bahrain 2
BY - Bielorussia 2
CM - Camerun 2
DO - Repubblica Dominicana 2
GT - Guatemala 2
HR - Croazia 2
IM - Isola di Man 2
IR - Iran 2
KH - Cambogia 2
KW - Kuwait 2
LU - Lussemburgo 2
LV - Lettonia 2
ML - Mali 2
NI - Nicaragua 2
NP - Nepal 2
QA - Qatar 2
AM - Armenia 1
BS - Bahamas 1
DK - Danimarca 1
ET - Etiopia 1
LB - Libano 1
MK - Macedonia 1
MM - Myanmar 1
Totale 13.161
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Città #
Ashburn 700
Singapore 644
San Jose 562
Santa Clara 470
Dublin 417
Chandler 405
Hong Kong 279
Dallas 274
Parma 266
Ann Arbor 238
Beijing 234
Jacksonville 208
Council Bluffs 205
Ho Chi Minh City 182
Boardman 140
Dearborn 129
Hanoi 125
Johannesburg 123
Los Angeles 110
Guangzhou 106
Nanjing 105
Shanghai 96
New York 91
Lauterbourg 81
Princeton 79
Wilmington 71
Helsinki 57
Hefei 53
Vienna 53
Munich 51
Stuttgart 50
Izmir 49
Leesburg 49
The Dalles 47
Dong Ket 44
Houston 42
Shenyang 42
Buffalo 39
Milan 39
San Mateo 39
Reggio Emilia 37
São Paulo 36
Toronto 36
Warsaw 33
Columbus 32
Nanchang 32
Tianjin 32
Moscow 31
Seattle 31
Brussels 29
Jinan 28
Rome 27
Da Nang 26
Hebei 25
Frankfurt am Main 24
Kensington 23
Tokyo 23
Denver 22
Haiphong 22
Modena 22
Stockholm 22
Des Moines 21
Kunming 21
Woodbridge 21
Bologna 20
Jiaxing 20
Montreal 19
Atlanta 18
Baghdad 18
Fremont 18
Jakarta 18
Brooklyn 17
Genoa 17
Piacenza 16
Seoul 16
Turku 16
Curitiba 15
Hangzhou 15
Ottawa 15
Amsterdam 14
Orem 14
Kocaeli 13
London 13
Phoenix 13
Boston 12
Changsha 11
Cremona 11
Fidenza 11
Mumbai 11
Bratislava 10
Chicago 10
Guayaquil 10
Halle 10
Manchester 10
Poplar 10
San Francisco 10
San José 10
Tashkent 10
Abidjan 9
Ankara 9
Totale 8.139
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Nome #
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 373
Analysis of Ga grading in CIGS absorbers with different Cu content 312
Development of a PV modules soiling monitoring system for smart maintenance 270
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 247
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects 218
Smart soiling sensor for PV modules 218
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs 218
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 208
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 177
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 173
A new silicon resistor technology for very high power snubbers 170
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 168
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 168
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 165
Temperature-dependent breakdown and hot carrier stress of PHEMTs 164
The role of defects on forward current in 4h-sic p-i-n diodes 162
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 162
Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance 162
Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells 161
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 160
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 160
Designing CIGS solar cells with front-side point contacts 159
Local Power Distribution—A Review of Nanogrid Architectures, Control Strategies, and Converters 159
Impact of constant and pulsed active balancing current patterns on the aging of lithium-ion batteries 158
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 158
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 156
Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells 156
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 156
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating 155
Comparing CV and DLCP Techniques in CIGS Solar Cells Through Self-Consistent Numerical Simulations 154
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 154
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 154
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 151
Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma 151
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact 149
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 147
A software tool for thermal simulation and rating evaluation of high power silicon devices 146
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 146
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 145
High reliable high power diode for welding applications 143
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects 141
On the combined effects of window/buffer and buffer/absorber conduction-band offsets, buffer thickness and doping on thin-film solar cell performance 139
On the effect of KInSe2 (KIS) layer on Cu In Ga Se 2 solar cell performance: a numerical study 137
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC 137
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 136
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer 136
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 131
Impact of front-side point contact/passivation geometry on thin-film solar cell performance 131
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study 131
Tuning the (Zn,Mg)O Layer Thickness for Improved Efficiency in CIGS Solar Cells with Zn(O,S) Buffer: A Numerical Investigation 130
Investigating Mesa Structure Impact on C-V Measurements 130
Modeling of thin-film Cu(In,Ga)Se2 solar cells 129
Physical investigation of trap-related effects in power HFETs and their reliability implications 129
Electro-thermal simulation of semiconductor devices and hybrid circuits 128
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 128
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells 128
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 127
Simulation of the effect of grain-boundaries in backside-passivated CIGS solar cells 126
Numerical simulation of grain boundaries in cadmium telluride solar cells 125
Lumped element thermal modeling of GaN-based HEMTs 125
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 123
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments 123
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 122
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances 121
Color-Performance Dynamics in CIGS Solar Cells with Varied ITO and Zn(O,S) Layer Thickness Explored by Numerical Simulations 119
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 118
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 118
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 115
Gate-lag effects in AlGaAs/GaAs power HFET’s 114
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells 114
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 112
Compact thermal modeling of GaN-Based Structures using Spice. 110
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 109
Interpretation of admittance signatures in Cu(In,Ga)Se2 solar cells 107
Simulazione termoelettrica e prove di vita accelerate di diodi PiN per elevate potenze 105
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 102
null 101
Water-assisted grown ZnO transparent conductive oxide enables efficient thin-film solar cells 100
Surface-related kink effect in AlGaAs/GaAs power HFETs 100
Hybrid large-signal/lumped-element electro-thermal modeling of GaN-HEMTs 99
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 98
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 96
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 95
Revani diffusion model in Cu(In,Ga)Se2 93
Finite-element thermal modeling of GaN-based HEMT structures 93
Color Engineering in CIGS Solar Cells: An Electro-Optical Modeling Perspective 92
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 89
Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin-Film Solar Cells 85
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 85
Differences of CIGS cell performance with Zn(O, S)/(Zn, Mg)O or CdS/i-ZnO buffers system explored by numerical simulations 82
Electro-thermal simulation of press-pack silicon resistors for high power application 81
Numerical investigation of high-field degradation of power HFETs 79
Impact of Bulk and Interface Recombination on Wide-Bandgap CGS Solar Cells: Numerical Analysis of CdS and ZTO Buffer Layers 76
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 72
Empirical investigation on device-degradation indicators under nonlinear dynamic regime 70
Measurement of the thermal resistance of AlGaN/GaN HEMTs 68
null 67
When Are Capacitance–Voltage, Drive-Level Capacitance Profiling, and Fast-CV Actually Insensitive to Interface and Bulk Defects? 35
Joint parameter identification in lithium-ion battery models: Real-time single-step approach 2
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 1
Totale 13.428
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Categoria #
all - tutte 45.107
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 45.107
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022368 0 0 0 32 38 15 36 52 23 25 17 130
2022/20231.636 193 152 110 112 126 208 7 123 509 11 58 27
2023/2024651 46 55 14 33 47 139 88 44 17 32 38 98
2024/20252.092 105 112 147 109 218 292 80 110 209 179 186 345
2025/20265.065 433 419 609 470 717 307 675 191 531 433 163 117
2026/2027905 166 234 276 229 0 0 0 0 0 0 0 0
Totale 13.428