SOZZI, Giovanna
 Distribuzione geografica
Continente #
NA - Nord America 2.406
EU - Europa 2.039
AS - Asia 1.238
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 6
OC - Oceania 2
Totale 5.712
Nazione #
US - Stati Uniti d'America 2.362
CN - Cina 832
IT - Italia 416
IE - Irlanda 414
SE - Svezia 370
SG - Singapore 278
DE - Germania 229
FI - Finlandia 225
UA - Ucraina 171
TR - Turchia 66
AT - Austria 50
VN - Vietnam 45
CA - Canada 44
GB - Regno Unito 41
BE - Belgio 35
RO - Romania 21
CZ - Repubblica Ceca 18
FR - Francia 13
NL - Olanda 10
SK - Slovacchia (Repubblica Slovacca) 10
CI - Costa d'Avorio 8
EU - Europa 8
PL - Polonia 6
BR - Brasile 3
IN - India 3
JP - Giappone 3
PK - Pakistan 3
CM - Camerun 2
IL - Israele 2
IM - Isola di Man 2
IR - Iran 2
LT - Lituania 2
TW - Taiwan 2
AU - Australia 1
CH - Svizzera 1
CL - Cile 1
DK - Danimarca 1
DZ - Algeria 1
EC - Ecuador 1
HR - Croazia 1
HU - Ungheria 1
JO - Giordania 1
KH - Cambogia 1
LV - Lettonia 1
MA - Marocco 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PE - Perù 1
RU - Federazione Russa 1
Totale 5.712
Città #
Dublin 414
Chandler 405
Ann Arbor 238
Singapore 231
Parma 217
Jacksonville 207
Ashburn 177
Boardman 130
Dearborn 129
Beijing 111
Nanjing 105
Guangzhou 92
Shanghai 86
Princeton 79
Wilmington 70
Stuttgart 50
Leesburg 49
Helsinki 47
Izmir 47
Dong Ket 44
Vienna 44
Shenyang 40
San Mateo 39
Nanchang 31
Seattle 30
Brussels 29
Houston 29
New York 29
Santa Clara 29
Jinan 28
Toronto 26
Hebei 25
Tianjin 25
Woodbridge 21
Jiaxing 20
Kunming 20
Des Moines 19
Los Angeles 19
Fremont 18
Milan 16
Piacenza 16
Hefei 15
Hangzhou 14
Ottawa 14
Kocaeli 13
Changsha 11
Cremona 11
Bratislava 10
Halle 10
Dallas 9
Norwalk 9
Abidjan 8
Bologna 8
Munich 8
Reggio Emilia 8
Rome 8
Timisoara 8
Campogalliano 7
Frankfurt am Main 7
Brno 6
Istanbul 6
Ningbo 6
Prata Di Pordenone 6
Taiyuan 6
Borås 5
Bremen 5
Fidenza 5
Fuzhou 5
Grafing 5
Haikou 5
Marseille 5
Modena 5
Salò 5
Taizhou 5
Warsaw 5
Ansbach 4
Düsseldorf 4
Focsani 4
Horia 4
Kyjov 4
Redwood City 4
Washington 4
Auburn Hills 3
Borgonovo Val Tidone 3
Bosco Chiesanuova 3
Collecchio 3
Fairfield 3
Padova 3
Rawalpindi 3
San Polo 3
Xian 3
Aachen 2
Anzola 2
Arcueil 2
Casalecchio di Reno 2
Catania 2
Chengdu 2
Chongqing 2
Citta 2
Cordovado 2
Totale 3.817
Nome #
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 255
Analysis of Ga grading in CIGS absorbers with different Cu content 211
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 134
Development of a PV modules soiling monitoring system for smart maintenance 133
Smart soiling sensor for PV modules 126
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects 112
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs 112
Designing CIGS solar cells with front-side point contacts 104
Temperature-dependent breakdown and hot carrier stress of PHEMTs 94
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 90
A software tool for thermal simulation and rating evaluation of high power silicon devices 86
Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma 85
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 85
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 84
Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells 84
The role of defects on forward current in 4h-sic p-i-n diodes 82
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 82
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 81
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 79
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 77
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating 77
Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells 76
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact 76
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study 76
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 72
A new silicon resistor technology for very high power snubbers 71
Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance 71
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 71
High reliable high power diode for welding applications 69
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 68
null 67
Electro-thermal simulation of semiconductor devices and hybrid circuits 66
Simulazione termoelettrica e prove di vita accelerate di diodi PiN per elevate potenze 66
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances 66
Physical investigation of trap-related effects in power HFETs and their reliability implications 66
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 65
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 65
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer 65
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 65
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 65
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 64
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects 64
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 64
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 64
Compact thermal modeling of GaN-Based Structures using Spice. 63
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 62
On the effect of KInSe2 (KIS) layer on Cu In Ga Se 2 solar cell performance: a numerical study 62
Simulation of the effect of grain-boundaries in backside-passivated CIGS solar cells 62
Modeling of thin-film Cu(In,Ga)Se2 solar cells 61
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 61
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 61
Local Power Distribution—A Review of Nanogrid Architectures, Control Strategies, and Converters 61
Finite-element thermal modeling of GaN-based HEMT structures 58
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 58
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 57
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments 56
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 55
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 55
Impact of front-side point contact/passivation geometry on thin-film solar cell performance 55
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC 55
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 54
Hybrid large-signal/lumped-element electro-thermal modeling of GaN-HEMTs 53
Numerical simulation of grain boundaries in cadmium telluride solar cells 53
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells 53
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 52
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 52
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 52
Gate-lag effects in AlGaAs/GaAs power HFET’s 52
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 52
Surface-related kink effect in AlGaAs/GaAs power HFETs 52
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 51
Lumped element thermal modeling of GaN-based HEMTs 51
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells 51
On the combined effects of window/buffer and buffer/absorber conduction-band offsets, buffer thickness and doping on thin-film solar cell performance 50
Numerical investigation of high-field degradation of power HFETs 48
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 42
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 39
Electro-thermal simulation of press-pack silicon resistors for high power application 39
Interpretation of admittance signatures in Cu(In,Ga)Se2 solar cells 39
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 36
Empirical investigation on device-degradation indicators under nonlinear dynamic regime 36
Investigating Mesa Structure Impact on C-V Measurements 31
Measurement of the thermal resistance of AlGaN/GaN HEMTs 30
Differences of CIGS cell performance with Zn(O, S)/(Zn, Mg)O or CdS/i-ZnO buffers system explored by numerical simulations 28
Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin-Film Solar Cells 23
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 18
Revani diffusion model in Cu(In,Ga)Se2 15
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 12
Totale 5.941
Categoria #
all - tutte 21.817
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.817


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020634 0 0 0 0 89 123 125 29 105 83 28 52
2020/2021662 10 52 45 35 85 65 58 30 125 39 55 63
2021/2022482 15 22 77 32 38 15 36 52 23 25 17 130
2022/20231.636 193 152 110 112 126 208 7 123 509 11 58 27
2023/2024651 46 55 14 33 47 139 88 44 17 32 38 98
2024/2025575 105 112 147 109 102 0 0 0 0 0 0 0
Totale 5.941