IRIS
SOZZI, Giovanna
 Distribuzione geografica
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Continente #
NA - Nord America 4.824
AS - Asia 3.906
EU - Europa 2.840
SA - Sud America 476
AF - Africa 183
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 5
Totale 12.243
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Nazione #
US - Stati Uniti d'America 4.695
SG - Singapore 1.257
CN - Cina 1.253
IT - Italia 640
VN - Vietnam 609
IE - Irlanda 418
SE - Svezia 394
BR - Brasile 350
DE - Germania 305
HK - Hong Kong 284
FI - Finlandia 251
UA - Ucraina 181
ZA - Sudafrica 131
FR - Francia 129
NL - Olanda 118
GB - Regno Unito 114
BD - Bangladesh 96
TR - Turchia 94
CA - Canada 86
AT - Austria 66
RU - Federazione Russa 60
IN - India 55
AR - Argentina 51
IQ - Iraq 50
PL - Polonia 38
BE - Belgio 36
JP - Giappone 29
ID - Indonesia 26
KR - Corea 25
MX - Messico 22
RO - Romania 22
PK - Pakistan 21
CZ - Repubblica Ceca 19
EC - Ecuador 19
CL - Cile 14
MA - Marocco 14
PH - Filippine 14
ES - Italia 13
VE - Venezuela 13
CO - Colombia 11
SK - Slovacchia (Repubblica Slovacca) 10
UZ - Uzbekistan 10
CI - Costa d'Avorio 9
SA - Arabia Saudita 9
EU - Europa 8
TH - Thailandia 8
CR - Costa Rica 7
JO - Giordania 7
DZ - Algeria 6
KE - Kenya 6
MY - Malesia 6
OM - Oman 6
PE - Perù 6
UY - Uruguay 6
IL - Israele 5
KZ - Kazakistan 5
LT - Lituania 5
TW - Taiwan 5
AE - Emirati Arabi Uniti 4
AL - Albania 4
AZ - Azerbaigian 4
TN - Tunisia 4
AU - Australia 3
BO - Bolivia 3
CH - Svizzera 3
EG - Egitto 3
GE - Georgia 3
HU - Ungheria 3
JM - Giamaica 3
KG - Kirghizistan 3
NG - Nigeria 3
PA - Panama 3
PS - Palestinian Territory 3
PY - Paraguay 3
BB - Barbados 2
BH - Bahrain 2
BY - Bielorussia 2
CM - Camerun 2
DO - Repubblica Dominicana 2
HR - Croazia 2
IM - Isola di Man 2
IR - Iran 2
KH - Cambogia 2
KW - Kuwait 2
LU - Lussemburgo 2
LV - Lettonia 2
ML - Mali 2
NP - Nepal 2
AM - Armenia 1
BS - Bahamas 1
DK - Danimarca 1
ET - Etiopia 1
GT - Guatemala 1
HN - Honduras 1
LB - Libano 1
MM - Myanmar 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PG - Papua Nuova Guinea 1
QA - Qatar 1
Totale 12.239
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Città #
Singapore 639
Ashburn 582
San Jose 483
Dublin 416
Chandler 405
Santa Clara 384
Hong Kong 275
Dallas 270
Parma 260
Ann Arbor 238
Beijing 230
Jacksonville 207
Ho Chi Minh City 181
Boardman 140
Dearborn 129
Hanoi 124
Johannesburg 123
Guangzhou 106
Nanjing 105
Los Angeles 104
Shanghai 95
New York 89
Lauterbourg 81
Princeton 79
Wilmington 71
Council Bluffs 69
Helsinki 57
Hefei 53
Vienna 53
Munich 51
Stuttgart 50
Izmir 49
Leesburg 49
The Dalles 47
Dong Ket 44
Shenyang 42
San Mateo 39
Houston 38
Reggio Emilia 37
Buffalo 36
Toronto 35
Warsaw 33
Columbus 32
Nanchang 32
Tianjin 32
Moscow 31
Seattle 31
São Paulo 31
Brussels 29
Jinan 28
Da Nang 26
Hebei 25
Frankfurt am Main 24
Kensington 23
Milan 23
Denver 22
Haiphong 22
Stockholm 22
Tokyo 22
Des Moines 21
Kunming 21
Woodbridge 21
Bologna 20
Jiaxing 20
Modena 20
Montreal 19
Rome 19
Baghdad 18
Fremont 18
Jakarta 18
Genoa 17
Brooklyn 16
Piacenza 16
Seoul 16
Turku 16
Hangzhou 15
Ottawa 15
Curitiba 14
Amsterdam 13
Kocaeli 13
Orem 13
Boston 12
London 12
Phoenix 12
Changsha 11
Cremona 11
Atlanta 10
Bratislava 10
Chicago 10
Halle 10
Poplar 10
San Francisco 10
Tashkent 10
Abidjan 9
Ankara 9
Fidenza 9
Guayaquil 9
Loiano 9
Manchester 9
Mumbai 9
Totale 7.623
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Nome #
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 359
Analysis of Ga grading in CIGS absorbers with different Cu content 304
Development of a PV modules soiling monitoring system for smart maintenance 258
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 235
Smart soiling sensor for PV modules 209
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects 208
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs 201
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 195
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 167
A new silicon resistor technology for very high power snubbers 161
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 157
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 157
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 156
Temperature-dependent breakdown and hot carrier stress of PHEMTs 154
Designing CIGS solar cells with front-side point contacts 154
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 154
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 153
Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance 153
The role of defects on forward current in 4h-sic p-i-n diodes 151
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 151
Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells 150
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 149
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 149
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 148
Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma 147
Local Power Distribution—A Review of Nanogrid Architectures, Control Strategies, and Converters 147
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 146
Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells 145
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 145
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 143
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 143
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating 142
A software tool for thermal simulation and rating evaluation of high power silicon devices 141
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 141
Impact of constant and pulsed active balancing current patterns on the aging of lithium-ion batteries 137
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects 137
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact 136
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 132
High reliable high power diode for welding applications 132
On the effect of KInSe2 (KIS) layer on Cu In Ga Se 2 solar cell performance: a numerical study 130
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 129
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer 129
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 128
On the combined effects of window/buffer and buffer/absorber conduction-band offsets, buffer thickness and doping on thin-film solar cell performance 127
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC 127
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 125
Modeling of thin-film Cu(In,Ga)Se2 solar cells 124
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study 124
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 123
Physical investigation of trap-related effects in power HFETs and their reliability implications 123
Impact of front-side point contact/passivation geometry on thin-film solar cell performance 122
Electro-thermal simulation of semiconductor devices and hybrid circuits 120
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 120
Numerical simulation of grain boundaries in cadmium telluride solar cells 120
Investigating Mesa Structure Impact on C-V Measurements 120
Tuning the (Zn,Mg)O Layer Thickness for Improved Efficiency in CIGS Solar Cells with Zn(O,S) Buffer: A Numerical Investigation 119
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells 118
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 117
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 115
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments 115
Simulation of the effect of grain-boundaries in backside-passivated CIGS solar cells 115
Lumped element thermal modeling of GaN-based HEMTs 114
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 113
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances 112
Color-Performance Dynamics in CIGS Solar Cells with Varied ITO and Zn(O,S) Layer Thickness Explored by Numerical Simulations 109
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 109
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 106
Gate-lag effects in AlGaAs/GaAs power HFET’s 106
Compact thermal modeling of GaN-Based Structures using Spice. 105
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells 105
Simulazione termoelettrica e prove di vita accelerate di diodi PiN per elevate potenze 103
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 102
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 101
Interpretation of admittance signatures in Cu(In,Ga)Se2 solar cells 100
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 98
Surface-related kink effect in AlGaAs/GaAs power HFETs 98
Comparing CV and DLCP Techniques in CIGS Solar Cells Through Self-Consistent Numerical Simulations 93
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 93
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 93
Hybrid large-signal/lumped-element electro-thermal modeling of GaN-HEMTs 92
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 91
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 86
Finite-element thermal modeling of GaN-based HEMT structures 85
Revani diffusion model in Cu(In,Ga)Se2 83
Color Engineering in CIGS Solar Cells: An Electro-Optical Modeling Perspective 83
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 80
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 79
Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin-Film Solar Cells 78
Differences of CIGS cell performance with Zn(O, S)/(Zn, Mg)O or CdS/i-ZnO buffers system explored by numerical simulations 77
Electro-thermal simulation of press-pack silicon resistors for high power application 77
Numerical investigation of high-field degradation of power HFETs 76
Water-assisted grown ZnO transparent conductive oxide enables efficient thin-film solar cells 68
Impact of Bulk and Interface Recombination on Wide-Bandgap CGS Solar Cells: Numerical Analysis of CdS and ZTO Buffer Layers 67
null 67
Empirical investigation on device-degradation indicators under nonlinear dynamic regime 67
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 65
Measurement of the thermal resistance of AlGaN/GaN HEMTs 63
When Are Capacitance–Voltage, Drive-Level Capacitance Profiling, and Fast-CV Actually Insensitive to Interface and Bulk Defects? 17
Totale 12.498
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Categoria #
all - tutte 40.777
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.777
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202163 0 0 0 0 0 0 0 0 0 0 0 63
2021/2022482 15 22 77 32 38 15 36 52 23 25 17 130
2022/20231.636 193 152 110 112 126 208 7 123 509 11 58 27
2023/2024651 46 55 14 33 47 139 88 44 17 32 38 98
2024/20252.092 105 112 147 109 218 292 80 110 209 179 186 345
2025/20265.040 433 419 609 470 717 307 675 191 531 433 163 92
Totale 12.498