SOZZI, Giovanna
 Distribuzione geografica
Continente #
NA - Nord America 5.084
AS - Asia 3.941
EU - Europa 2.891
SA - Sud America 485
Continente sconosciuto - Info sul continente non disponibili 264
AF - Africa 184
OC - Oceania 5
Totale 12.854
Nazione #
US - Stati Uniti d'America 4.943
SG - Singapore 1.263
CN - Cina 1.259
IT - Italia 687
VN - Vietnam 609
IE - Irlanda 418
SE - Svezia 394
BR - Brasile 355
DE - Germania 305
HK - Hong Kong 287
FI - Finlandia 251
UA - Ucraina 181
ZA - Sudafrica 131
FR - Francia 129
NL - Olanda 118
GB - Regno Unito 114
BD - Bangladesh 110
TR - Turchia 94
CA - Canada 89
AT - Austria 66
IN - India 60
RU - Federazione Russa 60
AR - Argentina 52
IQ - Iraq 50
PL - Polonia 38
BE - Belgio 37
JP - Giappone 29
ID - Indonesia 26
KR - Corea 25
MX - Messico 23
PK - Pakistan 22
RO - Romania 22
CZ - Repubblica Ceca 19
EC - Ecuador 19
ES - Italia 15
CL - Cile 14
MA - Marocco 14
PH - Filippine 14
CO - Colombia 13
VE - Venezuela 13
CR - Costa Rica 10
SK - Slovacchia (Repubblica Slovacca) 10
UZ - Uzbekistan 10
CI - Costa d'Avorio 9
SA - Arabia Saudita 9
EU - Europa 8
TH - Thailandia 8
JO - Giordania 7
DZ - Algeria 6
KE - Kenya 6
MY - Malesia 6
OM - Oman 6
PE - Perù 6
UY - Uruguay 6
IL - Israele 5
KZ - Kazakistan 5
LT - Lituania 5
TW - Taiwan 5
AE - Emirati Arabi Uniti 4
AL - Albania 4
AZ - Azerbaigian 4
JM - Giamaica 4
PY - Paraguay 4
TN - Tunisia 4
AU - Australia 3
BB - Barbados 3
BO - Bolivia 3
CH - Svizzera 3
EG - Egitto 3
GE - Georgia 3
HU - Ungheria 3
KG - Kirghizistan 3
NG - Nigeria 3
PA - Panama 3
PS - Palestinian Territory 3
BH - Bahrain 2
BY - Bielorussia 2
CM - Camerun 2
DO - Repubblica Dominicana 2
GT - Guatemala 2
HR - Croazia 2
IM - Isola di Man 2
IR - Iran 2
KH - Cambogia 2
KW - Kuwait 2
LU - Lussemburgo 2
LV - Lettonia 2
ML - Mali 2
NI - Nicaragua 2
NP - Nepal 2
AM - Armenia 1
BS - Bahamas 1
DK - Danimarca 1
ET - Etiopia 1
HN - Honduras 1
LB - Libano 1
MM - Myanmar 1
NZ - Nuova Zelanda 1
PG - Papua Nuova Guinea 1
PR - Porto Rico 1
Totale 12.592
Città #
Singapore 644
Ashburn 592
San Jose 505
Dublin 416
Chandler 405
Santa Clara 398
Hong Kong 278
Dallas 272
Parma 262
Ann Arbor 238
Beijing 234
Jacksonville 207
Council Bluffs 205
Ho Chi Minh City 181
Boardman 140
Dearborn 129
Hanoi 124
Johannesburg 123
Guangzhou 106
Los Angeles 106
Nanjing 105
Shanghai 96
New York 89
Lauterbourg 81
Princeton 79
Wilmington 71
Helsinki 57
Hefei 53
Vienna 53
Munich 51
Stuttgart 50
Izmir 49
Leesburg 49
The Dalles 47
Dong Ket 44
Shenyang 42
Houston 40
San Mateo 39
Buffalo 38
Milan 38
Reggio Emilia 37
Toronto 36
Warsaw 33
Columbus 32
Nanchang 32
Tianjin 32
Moscow 31
Seattle 31
São Paulo 31
Brussels 29
Jinan 28
Da Nang 26
Hebei 25
Rome 25
Frankfurt am Main 24
Kensington 23
Denver 22
Haiphong 22
Stockholm 22
Tokyo 22
Des Moines 21
Kunming 21
Woodbridge 21
Bologna 20
Jiaxing 20
Modena 20
Montreal 19
Baghdad 18
Fremont 18
Jakarta 18
Genoa 17
Brooklyn 16
Piacenza 16
Seoul 16
Turku 16
Curitiba 15
Hangzhou 15
Ottawa 15
Amsterdam 13
Kocaeli 13
Orem 13
Boston 12
London 12
Phoenix 12
Atlanta 11
Changsha 11
Cremona 11
Fidenza 11
Mumbai 11
Bratislava 10
Chicago 10
Halle 10
Poplar 10
San Francisco 10
Tashkent 10
Abidjan 9
Ankara 9
Guayaquil 9
Loiano 9
Manchester 9
Totale 7.856
Nome #
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 367
Analysis of Ga grading in CIGS absorbers with different Cu content 307
Development of a PV modules soiling monitoring system for smart maintenance 263
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 237
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects 211
Smart soiling sensor for PV modules 211
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs 209
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 200
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 171
A new silicon resistor technology for very high power snubbers 164
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 160
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 159
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 158
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 157
The role of defects on forward current in 4h-sic p-i-n diodes 157
Temperature-dependent breakdown and hot carrier stress of PHEMTs 156
Designing CIGS solar cells with front-side point contacts 156
Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells 155
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 154
Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance 154
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 153
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 152
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 151
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 150
Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma 149
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 149
Local Power Distribution—A Review of Nanogrid Architectures, Control Strategies, and Converters 149
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 147
Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells 147
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 147
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 146
Comparing CV and DLCP Techniques in CIGS Solar Cells Through Self-Consistent Numerical Simulations 146
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating 146
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 144
Impact of constant and pulsed active balancing current patterns on the aging of lithium-ion batteries 142
A software tool for thermal simulation and rating evaluation of high power silicon devices 142
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 142
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact 142
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects 139
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 137
High reliable high power diode for welding applications 137
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 135
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer 132
On the combined effects of window/buffer and buffer/absorber conduction-band offsets, buffer thickness and doping on thin-film solar cell performance 131
On the effect of KInSe2 (KIS) layer on Cu In Ga Se 2 solar cell performance: a numerical study 131
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC 130
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study 128
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 126
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 126
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 125
Modeling of thin-film Cu(In,Ga)Se2 solar cells 125
Physical investigation of trap-related effects in power HFETs and their reliability implications 125
Impact of front-side point contact/passivation geometry on thin-film solar cell performance 123
Numerical simulation of grain boundaries in cadmium telluride solar cells 122
Investigating Mesa Structure Impact on C-V Measurements 122
Tuning the (Zn,Mg)O Layer Thickness for Improved Efficiency in CIGS Solar Cells with Zn(O,S) Buffer: A Numerical Investigation 121
Electro-thermal simulation of semiconductor devices and hybrid circuits 121
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells 119
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 118
Lumped element thermal modeling of GaN-based HEMTs 118
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 117
Simulation of the effect of grain-boundaries in backside-passivated CIGS solar cells 117
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments 116
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 115
Color-Performance Dynamics in CIGS Solar Cells with Varied ITO and Zn(O,S) Layer Thickness Explored by Numerical Simulations 113
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances 113
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 111
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 108
Compact thermal modeling of GaN-Based Structures using Spice. 108
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 108
Gate-lag effects in AlGaAs/GaAs power HFET’s 108
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells 106
Simulazione termoelettrica e prove di vita accelerate di diodi PiN per elevate potenze 104
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 104
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 100
Interpretation of admittance signatures in Cu(In,Ga)Se2 solar cells 100
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 99
Surface-related kink effect in AlGaAs/GaAs power HFETs 99
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 97
Hybrid large-signal/lumped-element electro-thermal modeling of GaN-HEMTs 97
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 94
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 92
Finite-element thermal modeling of GaN-based HEMT structures 91
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 87
Color Engineering in CIGS Solar Cells: An Electro-Optical Modeling Perspective 87
Revani diffusion model in Cu(In,Ga)Se2 84
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 84
Water-assisted grown ZnO transparent conductive oxide enables efficient thin-film solar cells 81
Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin-Film Solar Cells 79
Electro-thermal simulation of press-pack silicon resistors for high power application 79
Differences of CIGS cell performance with Zn(O, S)/(Zn, Mg)O or CdS/i-ZnO buffers system explored by numerical simulations 78
Numerical investigation of high-field degradation of power HFETs 77
Impact of Bulk and Interface Recombination on Wide-Bandgap CGS Solar Cells: Numerical Analysis of CdS and ZTO Buffer Layers 70
Empirical investigation on device-degradation indicators under nonlinear dynamic regime 68
null 67
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 67
Measurement of the thermal resistance of AlGaN/GaN HEMTs 64
When Are Capacitance–Voltage, Drive-Level Capacitance Profiling, and Fast-CV Actually Insensitive to Interface and Bulk Defects? 24
Totale 12.854
Categoria #
all - tutte 43.146
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.146


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022467 0 22 77 32 38 15 36 52 23 25 17 130
2022/20231.636 193 152 110 112 126 208 7 123 509 11 58 27
2023/2024651 46 55 14 33 47 139 88 44 17 32 38 98
2024/20252.092 105 112 147 109 218 292 80 110 209 179 186 345
2025/20265.065 433 419 609 470 717 307 675 191 531 433 163 117
2026/2027331 166 165 0 0 0 0 0 0 0 0 0 0
Totale 12.854