The commonly used CdS/i-ZnO buffer system in Cu(In,Ga)Se2 (CIGS) thin-film solar cells is substituted either by Zn(O,S)/(Zn,Mg)O or (Cd,Zn)S/(Zn,Mg)O and investigated by electro-optical simulations. We considered different (Zn,Mg)O compositions and thicknesses to find the combinations giving the highest power conversion efficiencies. Similarly, we examine the effect of variations of the Zn mole fraction in (Cd,Zn)S for the (Cd,Zn)S/Zn0.83Mg0.17O system on the CIGS solar cell’s figures of merit.
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer / Sozzi, Giovanna; DI NAPOLI, Simone; Enna, Matteo; Menozzi, Roberto; Hariskos, Dimitrios; Witte, Wolfram. - (2019). (Intervento presentato al convegno 2019 IEEE 46th Photovoltaic Specialist Conference (PVSC) tenutosi a Chicago) [10.1109/PVSC40753.2019.8980882].
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer
Giovanna Sozzi
;Simone Di Napoli;Matteo Enna;Roberto Menozzi;
2019-01-01
Abstract
The commonly used CdS/i-ZnO buffer system in Cu(In,Ga)Se2 (CIGS) thin-film solar cells is substituted either by Zn(O,S)/(Zn,Mg)O or (Cd,Zn)S/(Zn,Mg)O and investigated by electro-optical simulations. We considered different (Zn,Mg)O compositions and thicknesses to find the combinations giving the highest power conversion efficiencies. Similarly, we examine the effect of variations of the Zn mole fraction in (Cd,Zn)S for the (Cd,Zn)S/Zn0.83Mg0.17O system on the CIGS solar cell’s figures of merit.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
