SOZZI, Giovanna
SOZZI, Giovanna
Dipartimento di Ingegneria e Architettura
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing
2016-01-01 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
A new silicon resistor technology for very high power snubbers
2005-01-01 Cova, Paolo; Sozzi, Giovanna; Menozzi, Roberto; Portesine, M.; Pampili, P.; Zani, P. E.
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells
2011-01-01 Troni, Fabrizio; Sozzi, Giovanna; Menozzi, Roberto
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers
2016-01-01 Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion
2011-01-01 D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs
2007-01-01 Sozzi, Giovanna; Menozzi, Roberto
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells
2021-01-01 Sozzi, G.; Cojocaru-Miredin, O.; Wuerz, R.
A software tool for thermal simulation and rating evaluation of high power silicon devices
2004-01-01 Pampili, P.; Portesine, M.; Cova, Paolo; Sozzi, Giovanna
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC
2019-01-01 Nipoti, R.; Canino, M.; Sapienza, Sergio; Bellettato, M.; Sozzi, G.; Alfieri, G.
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics
2016-01-01 Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
2017-01-01 Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers
2018-01-01 Werner, Florian; Hilaire Wolter, Max; Siebentritt, Susanne; Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Jackson, Philip; Witte, Wolfram; Carron, Romain; Avancini, Enrico; Paul Weiss, Thomas; Buecheler, Stephan
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency
2015-01-01 Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N.
Analysis of Ga grading in CIGS absorbers with different Cu content
2016-01-01 Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime
2011-01-01 A., Raffo; S., Di Falco; Sozzi, Giovanna; Menozzi, Roberto; D. M. M. P., Schreurs; G., Vannini
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects
2014-01-01 Sozzi, Giovanna; Mosca, R.; Calicchio, M.; Menozzi, Roberto
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading
2018-01-01 Sozzi, Giovanna; Napoli, Simone Di; Carrisi, Martina; Menozzi, Roberto
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs
1999-01-01 Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali
Breakdown and degradation issues and the choice of a safe load line for power HFET operation
2000-01-01 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects
2010-01-01 D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| (Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto | |
| A new silicon resistor technology for very high power snubbers | 1-gen-2005 | Cova, Paolo; Sozzi, Giovanna; Menozzi, Roberto; Portesine, M.; Pampili, P.; Zani, P. E. | |
| A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells | 1-gen-2011 | Troni, Fabrizio; Sozzi, Giovanna; Menozzi, Roberto | |
| A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers | 1-gen-2016 | Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N. | |
| A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion | 1-gen-2011 | D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener | |
| A review of the use of electro-thermal simulations for the analysis of heterostructure FETs | 1-gen-2007 | Sozzi, Giovanna; Menozzi, Roberto | |
| A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells | 1-gen-2021 | Sozzi, G.; Cojocaru-Miredin, O.; Wuerz, R. | |
| A software tool for thermal simulation and rating evaluation of high power silicon devices | 1-gen-2004 | Pampili, P.; Portesine, M.; Cova, Paolo; Sozzi, Giovanna | |
| Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC | 1-gen-2019 | Nipoti, R.; Canino, M.; Sapienza, Sergio; Bellettato, M.; Sozzi, G.; Alfieri, G. | |
| Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics | 1-gen-2016 | Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto | |
| Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes | 1-gen-2017 | Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna | |
| Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers | 1-gen-2018 | Werner, Florian; Hilaire Wolter, Max; Siebentritt, Susanne; Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Jackson, Philip; Witte, Wolfram; Carron, Romain; Avancini, Enrico; Paul Weiss, Thomas; Buecheler, Stephan | |
| Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency | 1-gen-2015 | Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N. | |
| Analysis of Ga grading in CIGS absorbers with different Cu content | 1-gen-2016 | Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N. | |
| Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime | 1-gen-2011 | A., Raffo; S., Di Falco; Sozzi, Giovanna; Menozzi, Roberto; D. M. M. P., Schreurs; G., Vannini | |
| Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects | 1-gen-2014 | Sozzi, Giovanna; Mosca, R.; Calicchio, M.; Menozzi, Roberto | |
| Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading | 1-gen-2018 | Sozzi, Giovanna; Napoli, Simone Di; Carrisi, Martina; Menozzi, Roberto | |
| Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs | 1-gen-1999 | Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali | |
| Breakdown and degradation issues and the choice of a safe load line for power HFET operation | 1-gen-2000 | D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali | |
| Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects | 1-gen-2010 | D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener |