IRIS

SOZZI, Giovanna

SOZZI, Giovanna  

Dipartimento di Ingegneria e Architettura  

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Risultati 1 - 20 di 87 (tempo di esecuzione: 0.032 secondi).
Titolo Data di pubblicazione Autore(i) File
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 1-gen-2016 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
A new silicon resistor technology for very high power snubbers 1-gen-2005 Cova, Paolo; Sozzi, Giovanna; Menozzi, Roberto; Portesine, M.; Pampili, P.; Zani, P. E.
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 1-gen-2011 Troni, Fabrizio; Sozzi, Giovanna; Menozzi, Roberto
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 1-gen-2016 Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 1-gen-2011 D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 1-gen-2007 Sozzi, Giovanna; Menozzi, Roberto
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells 1-gen-2021 Sozzi, G.; Cojocaru-Miredin, O.; Wuerz, R.
A software tool for thermal simulation and rating evaluation of high power silicon devices 1-gen-2004 Pampili, P.; Portesine, M.; Cova, Paolo; Sozzi, Giovanna
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC 1-gen-2019 Nipoti, R.; Canino, M.; Sapienza, Sergio; Bellettato, M.; Sozzi, G.; Alfieri, G.
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 1-gen-2016 Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 1-gen-2017 Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 1-gen-2018 Werner, Florian; Hilaire Wolter, Max; Siebentritt, Susanne; Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Jackson, Philip; Witte, Wolfram; Carron, Romain; Avancini, Enrico; Paul Weiss, Thomas; Buecheler, Stephan
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 1-gen-2015 Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N.
Analysis of Ga grading in CIGS absorbers with different Cu content 1-gen-2016 Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 1-gen-2011 A., Raffo; S., Di Falco; Sozzi, Giovanna; Menozzi, Roberto; D. M. M. P., Schreurs; G., Vannini
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 1-gen-2014 Sozzi, Giovanna; Mosca, R.; Calicchio, M.; Menozzi, Roberto
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 1-gen-2018 Sozzi, Giovanna; Napoli, Simone Di; Carrisi, Martina; Menozzi, Roberto
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 1-gen-1999 Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 1-gen-2000 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 1-gen-2024 Sozzi, G.; Sapienza, S.; Chiorboli, G.; Vines, L.; Hallen, A.; Nipoti, R.