This work investigates the effect of Cu content and Ga grading on the performance of CIGS cells, by means of numerical simulations and comparison with corresponding experiments. Different Ga profiles and Cu average concentrations are considered. We show that the optical effect of Cu content must be properly taken into account to model NIR absorption. As far as the GGI profile is concerned, we show that the main improvement can be obtained by increasing the GGI ratio toward the back-side; an optimized notch bandgap profile can be designed with the help of these indications.
Analysis of Ga grading in CIGS absorbers with different Cu content / Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.. - ELETTRONICO. - (2016), pp. 2279-2282. (Intervento presentato al convegno 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 tenutosi a Portland, OR, USA nel 5-10 June 2016) [10.1109/PVSC.2016.7750042].
Analysis of Ga grading in CIGS absorbers with different Cu content
SOZZI, Giovanna;DI NAPOLI, SIMONE;MENOZZI, Roberto;
2016-01-01
Abstract
This work investigates the effect of Cu content and Ga grading on the performance of CIGS cells, by means of numerical simulations and comparison with corresponding experiments. Different Ga profiles and Cu average concentrations are considered. We show that the optical effect of Cu content must be properly taken into account to model NIR absorption. As far as the GGI profile is concerned, we show that the main improvement can be obtained by increasing the GGI ratio toward the back-side; an optimized notch bandgap profile can be designed with the help of these indications.| File | Dimensione | Formato | |
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