MENOZZI, Roberto

MENOZZI, Roberto  

Dipartimento di Ingegneria e Architettura  

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Risultati 1 - 20 di 177 (tempo di esecuzione: 0.063 secondi).
Titolo Data di pubblicazione Autore(i) File
A new method to extract HBT thermal resistance and its temperature and power dependence 1-gen-2005 Menozzi, Roberto; Barrett, J.; Ersland, P.
A new technique to measure the thermal resistance of LDMOS transistors 1-gen-2005 Menozzi, Roberto; Kingswood, A. C.
A new ultra high power silicon p-i-n diode for high frequency application 1-gen-2002 M., Portesine; P. E., Zani; M., Bianconi; P., Fuochi; M., Lavalle; Cova, Paolo; Menozzi, Roberto
A physical model of the behavior of GaAs MESFETs in the linear region 1-gen-1996 Menozzi, Roberto; Cova, Paolo
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 1-gen-2016 Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 1-gen-2018 Werner, Florian; Hilaire Wolter, Max; Siebentritt, Susanne; Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Jackson, Philip; Witte, Wolfram; Carron, Romain; Avancini, Enrico; Paul Weiss, Thomas; Buecheler, Stephan
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 1-gen-2015 Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N.
Analysis of Ga grading in CIGS absorbers with different Cu content 1-gen-2016 Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 1-gen-2011 A., Raffo; S., Di Falco; Sozzi, Giovanna; Menozzi, Roberto; D. M. M. P., Schreurs; G., Vannini
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 1-gen-2014 Sozzi, Giovanna; Mosca, R.; Calicchio, M.; Menozzi, Roberto
Anomalous overvoltage oscillations in the reverse recovery of power p-i-n diodes: experiments and simulations 1-gen-1999 Cova, Paolo; Menozzi, Roberto; M., Pasqualetti; M., Portesine; R., Scicolone; B., Zerbinati
The Apollo project: LV power supplies for the next high energy physics experiments 1-gen-2011 A., Lanza; M., Alderighi; M., Citterio; M., Riva; Cova, Paolo; Delmonte, Nicola; Menozzi, Roberto; A., Paccagnella; F., Sichirollo; G., Spiazzi; M., Stellini; S., Baccaro; F., Iannuzzo; A., Sanseverino; G., Busatto; V., De Luca
Assessing the impact of rear point-contact/passivation on CIGS cells with different absorber thickness and grading 1-gen-2018 Sozzi, Giovanna; Napoli, Simone Di; Carrisi, Martina; Menozzi, Roberto
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 1-gen-1995 Menozzi, Roberto; Cova, Paolo; A., Pisano; F., Fantini; Pavesi, Maura; AND P., Conti
Behavioral modelling of PROFET™ devices for system-level simulation of mission profiles in automotive environment applications 1-gen-2021 Simonazzi, Marco; Santoro, Danilo; Bernardoni, Mirko; Delmonte, Nicola; Cova, Paolo; Menozzi, Roberto
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 1-gen-1999 Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 1-gen-2000 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification 1-gen-2000 Menozzi, Roberto
Breakdown walkout in pseudomorphic HEMTs 1-gen-1996 Menozzi, Roberto; Cova, Paolo; Fantini, F; Canali, C.
Caratterizzazione del degrado da elettroni caldi di HEMT su InP 1-gen-1998 Borgarino, M.; Cattani, L.; Cova, P.; Menozzi, R.