IRIS

MENOZZI, Roberto

MENOZZI, Roberto  

Dipartimento di Ingegneria e Architettura  

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Risultati 1 - 20 di 189 (tempo di esecuzione: 0.046 secondi).
Titolo Data di pubblicazione Autore(i) File
A est di Eden: l’elettronica e il Santo Graal della sostenibilità 1-gen-2021 Menozzi, Roberto
A new method to extract HBT thermal resistance and its temperature and power dependence 1-gen-2005 Menozzi, Roberto; Barrett, J.; Ersland, P.
A new method to measure temperature- and power-dependent thermal resistances of HBTs 1-gen-2004 Menozzi, Roberto; Barrett, J.; Ersland, P.
A new silicon resistor technology for very high power snubbers 1-gen-2005 Cova, Paolo; Sozzi, Giovanna; Menozzi, Roberto; Portesine, M.; Pampili, P.; Zani, P. E.
A new technique to measure the thermal resistance of LDMOS transistors 1-gen-2005 Menozzi, Roberto; Kingswood, A. C.
A new ultra high power silicon p-i-n diode for high frequency application 1-gen-2002 M., Portesine; P. E., Zani; M., Bianconi; P., Fuochi; M., Lavalle; Cova, Paolo; Menozzi, Roberto
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 1-gen-2011 Troni, Fabrizio; Sozzi, Giovanna; Menozzi, Roberto
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 1-gen-2016 Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 1-gen-2011 D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener
A physical model of the behavior of GaAs MESFETs in the linear region 1-gen-1996 Menozzi, Roberto; Cova, Paolo
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 1-gen-2007 Sozzi, Giovanna; Menozzi, Roberto
A study of hot electron degradation effects in pseudomorphic HEMTs 1-gen-1997 Cova, Paolo; Menozzi, Roberto; F., Fantini; Pavesi, Maura; G., Meneghesso
A study of hot-electron degradation effects in pseudomorphic HEMTs 1-gen-1997 Cova, P; Menozzi, R; Fantini, F; Pavesi, M; Meneghesso, G
A Test Pattern For Three-Dimensional Latch-up Analysis 1-gen-1993 DE MUNARI, Ilaria; Menozzi, Roberto; M., Davoli; F., Fantini
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 1-gen-2016 Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 1-gen-2018 Werner, Florian; Hilaire Wolter, Max; Siebentritt, Susanne; Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Jackson, Philip; Witte, Wolfram; Carron, Romain; Avancini, Enrico; Paul Weiss, Thomas; Buecheler, Stephan
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 1-gen-2015 Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N.
Analysis of Ga grading in CIGS absorbers with different Cu content 1-gen-2016 Sozzi, Giovanna; DI NAPOLI, Simone; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.
Analysis of Innovative 3D-Printed Direct Coolers for Modular Power Devices 1-gen-2023 Delmonte, Nicola; Cova, Paolo; Spaggiari, Davide; Santoro, Danilo; Sciancalepore, Corrado; Menozzi, Roberto
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 1-gen-2011 A., Raffo; S., Di Falco; Sozzi, Giovanna; Menozzi, Roberto; D. M. M. P., Schreurs; G., Vannini