In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain.

A study of hot electron degradation effects in pseudomorphic HEMTs / Cova, Paolo; Menozzi, Roberto; F., Fantini; Pavesi, Maura; G., Meneghesso. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 37:(1997), pp. 1131-1135. [10.1016/S0026-2714(96)00274-0]

A study of hot electron degradation effects in pseudomorphic HEMTs

COVA, Paolo;MENOZZI, Roberto;PAVESI, Maura;
1997-01-01

Abstract

In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain.
1997
A study of hot electron degradation effects in pseudomorphic HEMTs / Cova, Paolo; Menozzi, Roberto; F., Fantini; Pavesi, Maura; G., Meneghesso. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 37:(1997), pp. 1131-1135. [10.1016/S0026-2714(96)00274-0]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1498141
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