This paper introduces a new technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard dc IC–VCE measurements taken at different baseplate temperatures, but it is able to account for the dependence of the thermal resistance on both the baseplate temperature and the dissipated power (under the simplifying assumption that the thermal resistance increases linearly with the dissipated power). We have obtained and shown consistent results extracted from devices with an emitter area ranging from 90 μm^2 (1 finger) to 1080 μm^2 (12 fingers). The thermal-resistance values extracted with a standard and well– known technique are seen to fall inside the range of our results. We have also applied an alternative method that assumes a linear dependence between thermal resistance and junction temperature, and we have shown that both models lead to similar results, which points to the consistency and robustness of our extraction technique.

A new method to extract HBT thermal resistance and its temperature and power dependence / Menozzi, Roberto; Barrett, J.; Ersland, P.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 5:(2005), pp. 595-601. [10.1109/TDMR.2005.854210]

A new method to extract HBT thermal resistance and its temperature and power dependence

MENOZZI, Roberto;
2005-01-01

Abstract

This paper introduces a new technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard dc IC–VCE measurements taken at different baseplate temperatures, but it is able to account for the dependence of the thermal resistance on both the baseplate temperature and the dissipated power (under the simplifying assumption that the thermal resistance increases linearly with the dissipated power). We have obtained and shown consistent results extracted from devices with an emitter area ranging from 90 μm^2 (1 finger) to 1080 μm^2 (12 fingers). The thermal-resistance values extracted with a standard and well– known technique are seen to fall inside the range of our results. We have also applied an alternative method that assumes a linear dependence between thermal resistance and junction temperature, and we have shown that both models lead to similar results, which points to the consistency and robustness of our extraction technique.
2005
A new method to extract HBT thermal resistance and its temperature and power dependence / Menozzi, Roberto; Barrett, J.; Ersland, P.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 5:(2005), pp. 595-601. [10.1109/TDMR.2005.854210]
File in questo prodotto:
File Dimensione Formato  
menozzi_tdmr_sep05.pdf

non disponibili

Tipologia: Documento in Post-print
Licenza: Creative commons
Dimensione 501.49 kB
Formato Adobe PDF
501.49 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1445767
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 30
  • ???jsp.display-item.citation.isi??? 26
social impact