In this work we use numerical simulations to study how the doping profile extracted by the commonly used C-V technique is influenced by the solar cell main features, as the doping and thickness of different layers, or the conduction band offsets at hero-interfaces. The doping profiles dependence on temperature is also investigated. The effect of both acceptor and donor deep defects of different energy and density on the simulated doping profile has been analyzed and correlated with experimental results, in order to give indications for the correct interpretation of measured doping profile.

A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers / Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.. - ELETTRONICO. - (2016), pp. 2283-2288. (Intervento presentato al convegno 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 tenutosi a Portland, OR, USA nel 5-10 June 2016) [10.1109/PVSC.2016.7750043].

A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers

SOZZI, Giovanna;MENOZZI, Roberto;
2016-01-01

Abstract

In this work we use numerical simulations to study how the doping profile extracted by the commonly used C-V technique is influenced by the solar cell main features, as the doping and thickness of different layers, or the conduction band offsets at hero-interfaces. The doping profiles dependence on temperature is also investigated. The effect of both acceptor and donor deep defects of different energy and density on the simulated doping profile has been analyzed and correlated with experimental results, in order to give indications for the correct interpretation of measured doping profile.
2016
9781509027248
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers / Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.. - ELETTRONICO. - (2016), pp. 2283-2288. (Intervento presentato al convegno 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 tenutosi a Portland, OR, USA nel 5-10 June 2016) [10.1109/PVSC.2016.7750043].
File in questo prodotto:
File Dimensione Formato  
sozzi_pvsc_16_CV.pdf

solo utenti autorizzati

Tipologia: Documento in Post-print
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 847.82 kB
Formato Adobe PDF
847.82 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
2016-sozzi-a-numerical-study of the use of C-V-pvsc2016.pdf

accesso aperto

Descrizione: Articolo principale
Tipologia: Documento in Post-print
Licenza: Creative commons
Dimensione 1.26 MB
Formato Adobe PDF
1.26 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2821206
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 15
  • ???jsp.display-item.citation.isi??? 13
social impact