In this work we use numerical simulations to study how the doping profile extracted by the commonly used C-V technique is influenced by the solar cell main features, as the doping and thickness of different layers, or the conduction band offsets at hero-interfaces. The doping profiles dependence on temperature is also investigated. The effect of both acceptor and donor deep defects of different energy and density on the simulated doping profile has been analyzed and correlated with experimental results, in order to give indications for the correct interpretation of measured doping profile.
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers / Sozzi, Giovanna; Lazzarini, M.; Menozzi, Roberto; Carron, R.; Avancini, E.; Bissig, B.; Buecheler, S.; Tiwari, A. N.. - ELETTRONICO. - (2016), pp. 2283-2288. (Intervento presentato al convegno 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 tenutosi a Portland, OR, USA nel 5-10 June 2016) [10.1109/PVSC.2016.7750043].
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers
SOZZI, Giovanna;MENOZZI, Roberto;
2016-01-01
Abstract
In this work we use numerical simulations to study how the doping profile extracted by the commonly used C-V technique is influenced by the solar cell main features, as the doping and thickness of different layers, or the conduction band offsets at hero-interfaces. The doping profiles dependence on temperature is also investigated. The effect of both acceptor and donor deep defects of different energy and density on the simulated doping profile has been analyzed and correlated with experimental results, in order to give indications for the correct interpretation of measured doping profile.File | Dimensione | Formato | |
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