In this paper we present a physical description of the DC behavior of GaAs MESFETs for MMICs biased in the linear region. The model is based on the Gradual Channel Approximation and on a consistent method to extract gate bias dependent source and drain parasitic resistances. Several devices with different geometries are considered, and good modeling results are obtained.
A physical model of the behavior of GaAs MESFETs in the linear region / Menozzi, Roberto; Cova, Paolo. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - 8:(1996), pp. 68-70.
A physical model of the behavior of GaAs MESFETs in the linear region
MENOZZI, Roberto;COVA, Paolo
1996-01-01
Abstract
In this paper we present a physical description of the DC behavior of GaAs MESFETs for MMICs biased in the linear region. The model is based on the Gradual Channel Approximation and on a consistent method to extract gate bias dependent source and drain parasitic resistances. Several devices with different geometries are considered, and good modeling results are obtained.File in questo prodotto:
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