In this paper we present a physical description of the DC behavior of GaAs MESFETs for MMICs biased in the linear region. The model is based on the Gradual Channel Approximation and on a consistent method to extract gate bias dependent source and drain parasitic resistances. Several devices with different geometries are considered, and good modeling results are obtained.

A physical model of the behavior of GaAs MESFETs in the linear region / R. MENOZZI; P. COVA. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - 8:(1996), pp. 68-70.

A physical model of the behavior of GaAs MESFETs in the linear region

MENOZZI, Roberto;COVA, Paolo
1996

Abstract

In this paper we present a physical description of the DC behavior of GaAs MESFETs for MMICs biased in the linear region. The model is based on the Gradual Channel Approximation and on a consistent method to extract gate bias dependent source and drain parasitic resistances. Several devices with different geometries are considered, and good modeling results are obtained.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1642703
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