We show results of a self-consistent large-signal electro-thermal GaN HEMT model that includes trap related and self-heating dispersion effects. Both self-heating and trap dynamics are treated with a strictly physical approach that makes it easier to link the model parameter with the physical HEMT structure and material characteristics. The model, implemented in ADS, is applied to measured DC data taken at ambient temperatures between 200 K and 400 K, with excellent results. Several examples are given of dynamic HEMT simulation, showing the co-existence and the interaction of temperature- and trap related dispersive effects.
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion / D., Mari; Bernardoni, Mirko; Sozzi, Giovanna; Menozzi, Roberto; G. A., Umana Membreno; B. D., Nener. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 51:(2011), pp. 229-234. [10.1016/j.microrel.2010.09.025]
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion
BERNARDONI, Mirko;SOZZI, Giovanna;MENOZZI, Roberto;
2011-01-01
Abstract
We show results of a self-consistent large-signal electro-thermal GaN HEMT model that includes trap related and self-heating dispersion effects. Both self-heating and trap dynamics are treated with a strictly physical approach that makes it easier to link the model parameter with the physical HEMT structure and material characteristics. The model, implemented in ADS, is applied to measured DC data taken at ambient temperatures between 200 K and 400 K, with excellent results. Several examples are given of dynamic HEMT simulation, showing the co-existence and the interaction of temperature- and trap related dispersive effects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
