In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain. (C) 1997 Elsevier Science Ltd.
A study of hot-electron degradation effects in pseudomorphic HEMTs / Cova, P; Menozzi, R; Fantini, F; Pavesi, M; Meneghesso, G. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 37:7(1997), pp. 1131-1135. [10.1016/S0026-2714(96)00274-0]
A study of hot-electron degradation effects in pseudomorphic HEMTs
Cova, P;Menozzi, R;Pavesi, M;
1997-01-01
Abstract
In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain. (C) 1997 Elsevier Science Ltd.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
