3D numerical simulations of CIGS thin-film solar cells with different grain-boundary (GB) characteristics have been carried out in order to investigate the effect of defect properties and band edge shifts at GBs on the cell performance. Simulation results are compared with experimental data taken on cells with and without NaF post deposition treatment. GBs with different energy gaps and defect properties have been analyzed. Simulations support the idea that the detrimental effect of defective GBs on the cell performance might be reduced by a treatment with Na. The results of this study can help with the interpretation of experimental findings.

A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells / Sozzi, G.; Cojocaru-Miredin, O.; Wuerz, R.. - ELETTRONICO. - 0160-8371(2021), pp. 187-191. ((Intervento presentato al convegno 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 tenutosi a usa nel 2021 [10.1109/PVSC43889.2021.9518887].

A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells

Sozzi G.;
2021

Abstract

3D numerical simulations of CIGS thin-film solar cells with different grain-boundary (GB) characteristics have been carried out in order to investigate the effect of defect properties and band edge shifts at GBs on the cell performance. Simulation results are compared with experimental data taken on cells with and without NaF post deposition treatment. GBs with different energy gaps and defect properties have been analyzed. Simulations support the idea that the detrimental effect of defective GBs on the cell performance might be reduced by a treatment with Na. The results of this study can help with the interpretation of experimental findings.
978-1-6654-1922-2
A simulation study on the effect of sodium on grain boundary passivation in CIGS thin-film solar cells / Sozzi, G.; Cojocaru-Miredin, O.; Wuerz, R.. - ELETTRONICO. - 0160-8371(2021), pp. 187-191. ((Intervento presentato al convegno 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 tenutosi a usa nel 2021 [10.1109/PVSC43889.2021.9518887].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2899297
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