This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested.
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown / DIECI D.; SOZZI G.; MENOZZI R.; TEDIOSI E.; LANZIERI C.; CANALI C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 48(2001), pp. 1929-1937. [10.1109/16.944179]
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown
SOZZI, Giovanna;MENOZZI, Roberto;
2001
Abstract
This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
