This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested.

Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown / DIECI D.; SOZZI G.; MENOZZI R.; TEDIOSI E.; LANZIERI C.; CANALI C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 48(2001), pp. 1929-1937. [10.1109/16.944179]

Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown

SOZZI, Giovanna;MENOZZI, Roberto;
2001

Abstract

This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested.
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown / DIECI D.; SOZZI G.; MENOZZI R.; TEDIOSI E.; LANZIERI C.; CANALI C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 48(2001), pp. 1929-1937. [10.1109/16.944179]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1457078
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