This work gives an overview of the main effects and reliability issues connected with high drain voltage conditions in microwave FETs. It also presents a comprehensive set of techniques and experiments for the characterization and investigation of the effects of hot electron and impact ionization conditions in microwave power devices, taking as a test vehicle Ku-band AlGaAs/GaAs power HFETs.
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation / D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali. - (2000). (Intervento presentato al convegno European Space Components Conf. (ESCCON 2000) tenutosi a Noordwijk (The Netherlands) nel 21-23 Mar. 2000).
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation
MENOZZI, Roberto;SOZZI, Giovanna;
2000-01-01
Abstract
This work gives an overview of the main effects and reliability issues connected with high drain voltage conditions in microwave FETs. It also presents a comprehensive set of techniques and experiments for the characterization and investigation of the effects of hot electron and impact ionization conditions in microwave power devices, taking as a test vehicle Ku-band AlGaAs/GaAs power HFETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
