This work gives an overview of the main effects and reliability issues connected with high drain voltage conditions in microwave FETs. It also presents a comprehensive set of techniques and experiments for the characterization and investigation of the effects of hot electron and impact ionization conditions in microwave power devices, taking as a test vehicle Ku-band AlGaAs/GaAs power HFETs.

Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation / D. Dieci; R. Menozzi; T. Tomasi; G. Sozzi; C. Lanzieri; C. Canali. - (2000). ((Intervento presentato al convegno European Space Components Conf. (ESCCON 2000) tenutosi a Noordwijk (The Netherlands) nel 21-23 Mar. 2000.

Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation

MENOZZI, Roberto;SOZZI, Giovanna;
2000

Abstract

This work gives an overview of the main effects and reliability issues connected with high drain voltage conditions in microwave FETs. It also presents a comprehensive set of techniques and experiments for the characterization and investigation of the effects of hot electron and impact ionization conditions in microwave power devices, taking as a test vehicle Ku-band AlGaAs/GaAs power HFETs.
92-9092-756-9
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation / D. Dieci; R. Menozzi; T. Tomasi; G. Sozzi; C. Lanzieri; C. Canali. - (2000). ((Intervento presentato al convegno European Space Components Conf. (ESCCON 2000) tenutosi a Noordwijk (The Netherlands) nel 21-23 Mar. 2000.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2300688
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