This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs, in terms of: (1) thermal resistance; (2) ohmic series resistance (at low drain bias). In spite of their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances / Menozzi, Roberto; UMANA MEMBRENO, G. A.; Nener, B. D.; Parish, G.; Sozzi, Giovanna; Faraone, L.; Mishra, U. K.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 8:2(2008), pp. 255-264. [10.1109/TDMR.2008.918960]
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances
MENOZZI, Roberto;SOZZI, Giovanna;
2008-01-01
Abstract
This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs, in terms of: (1) thermal resistance; (2) ohmic series resistance (at low drain bias). In spite of their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.| File | Dimensione | Formato | |
|---|---|---|---|
|
menozzi_tdmr_jun08.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
434.48 kB
Formato
Adobe PDF
|
434.48 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
