This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs, in terms of: (1) thermal resistance; (2) ohmic series resistance (at low drain bias). In spite of their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.

Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances / Menozzi, Roberto; UMANA MEMBRENO, G. A.; Nener, B. D.; Parish, G.; Sozzi, Giovanna; Faraone, L.; Mishra, U. K.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 8:2(2008), pp. 255-264. [10.1109/TDMR.2008.918960]

Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances

MENOZZI, Roberto;SOZZI, Giovanna;
2008-01-01

Abstract

This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs, in terms of: (1) thermal resistance; (2) ohmic series resistance (at low drain bias). In spite of their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.
2008
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances / Menozzi, Roberto; UMANA MEMBRENO, G. A.; Nener, B. D.; Parish, G.; Sozzi, Giovanna; Faraone, L.; Mishra, U. K.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 8:2(2008), pp. 255-264. [10.1109/TDMR.2008.918960]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1833627
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