The reverse recovery (RR) behavior of SiC MOSFET body diode is of great importance in power application, where these devices are used in a wide range of operating temperatures. The carrier lifetime in the drift region varies with temperature, and it heavily affects the tailoring of the RR current, opening reliability issues related to the RR voltage amplitude and to possible anomalous voltage oscillations during the recovery. From the users' point of view, it would be useful to have a simple technique able to give predictive information about the body diode RR behavior of commercial devices over the whole range of working temperatures. An experimental-simulation approach is presented in this paper to correlate the carrier lifetime measured by simple OCVD measurements versus temperature with the RR behavior of the body diode, that can be useful at the design stage of power converters. Simulations of the body diode reverse-recovery are performed for a wide range of carrier lifetimes. This allows to estimate the effect of changes of carrier lifetime with temperature on the body diode switching transients. Preliminary results obtained with a 1700 V/5A commercial MOSFET are shown.
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs / Sapienza, S.; Sozzi, G.; Santoro, D.; Cova, P.; Delmonte, N.; Verrini, G.; Chiorboli, G.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 113(2020), p. 113937. [10.1016/j.microrel.2020.113937]
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