This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation for circuit modeling and reliability estimation. A physical-level lumped element dynamic thermal network able to describe the two-dimensional device geometry is self-consistently coupled with an electro-thermal compact large-signal model. The results obtained with the lumped-element thermal network are compared with finite-element simulations and shown to provide valuable estimates of the thermal behavior of very large 2D structures.
Lumped element thermal modeling of GaN-based HEMTs / Bertoluzza, Fulvio; Sozzi, Giovanna; Delmonte, Nicola; Menozzi, Roberto. - (2009), pp. 973-976. (Intervento presentato al convegno 2009 IEEE MTT-S Int. Microwave Symp. tenutosi a Boston, MA (USA) nel 7-12 June 2009) [10.1109/mwsym.2009.5165861].
Lumped element thermal modeling of GaN-based HEMTs
BERTOLUZZA, Fulvio;SOZZI, Giovanna;DELMONTE, Nicola;MENOZZI, Roberto
2009-01-01
Abstract
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation for circuit modeling and reliability estimation. A physical-level lumped element dynamic thermal network able to describe the two-dimensional device geometry is self-consistently coupled with an electro-thermal compact large-signal model. The results obtained with the lumped-element thermal network are compared with finite-element simulations and shown to provide valuable estimates of the thermal behavior of very large 2D structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
