This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs power HFETs. A commercial two-dimensional drift-diffusion tool is used to investigate electric-field distributions, the effects of electron capture at the device surface under hot-carrier conditions, and the impact of drain recess scaling on such effects. Wherever experimental data are available for direct comparison, a good match is observed with our simulations. The main results of this study are (1) a validation of the hypothesis that attributes the main high-field degradation effects to electron capture over the gate-drain access region, and (2) design indications pointing out to the possibility of a reverse correlation between the gate-drain breakdown voltage and the device hot-carrier reliability.
|???metadata.dc.ugov.nometipoministero???:||Articolo su rivista|
|Appare nelle tipologie:||1.1 Articolo su rivista|