This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs power HFETs. A commercial two-dimensional drift-diffusion tool is used to investigate electric-field distributions, the effects of electron capture at the device surface under hot-carrier conditions, and the impact of drain recess scaling on such effects. Wherever experimental data are available for direct comparison, a good match is observed with our simulations. The main results of this study are (1) a validation of the hypothesis that attributes the main high-field degradation effects to electron capture over the gate-drain access region, and (2) design indications pointing out to the possibility of a reverse correlation between the gate-drain breakdown voltage and the device hot-carrier reliability.

High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study / SOZZI G; MENOZZI R.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 42(2002), pp. 53-59. [10.1016/S0026-2714(01)00240-2]

High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study

SOZZI, Giovanna;MENOZZI, Roberto
2002

Abstract

This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs power HFETs. A commercial two-dimensional drift-diffusion tool is used to investigate electric-field distributions, the effects of electron capture at the device surface under hot-carrier conditions, and the impact of drain recess scaling on such effects. Wherever experimental data are available for direct comparison, a good match is observed with our simulations. The main results of this study are (1) a validation of the hypothesis that attributes the main high-field degradation effects to electron capture over the gate-drain access region, and (2) design indications pointing out to the possibility of a reverse correlation between the gate-drain breakdown voltage and the device hot-carrier reliability.
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study / SOZZI G; MENOZZI R.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 42(2002), pp. 53-59. [10.1016/S0026-2714(01)00240-2]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1457079
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