By comparing simulated and measured dark current-voltage (I-V) characteristics of CIGS cells at different temperatures, we investigate the temperature behavior of the shunt leakage current, and find that it can be explained by large donor trap concentrations at grain boundaries (GBs), and by a Schottky barrier at the backside contact where the GBs meets the anode metallization. We studied the I-V characteristics in the temperature range 280 K - 160 K achieving good fits of the measured I-V curves, especially for reverse bias and low forward bias, where the shunt leakage current dominates. The most important parameters determining the shunt leakage current value and its temperature dependence are the peak energy and density of the GB donor distribution, which control the inversion of GBs and the pinning of Fermi level at the anode/GB contact.

On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact / Sozzi, Giovanna; Menozzi, Roberto; Cavallari, Nicholas; Bronzoni, M.; Annoni, Filippo; Calicchio, M.; Mazzer, M.. - ELETTRONICO. - (2015), pp. 1-4. (Intervento presentato al convegno Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd tenutosi a New Orleans, LA, USA nel 14-19 June 2015) [10.1109/PVSC.2015.7355779].

On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact

SOZZI, Giovanna;MENOZZI, Roberto;CAVALLARI, NICHOLAS;ANNONI, Filippo;
2015-01-01

Abstract

By comparing simulated and measured dark current-voltage (I-V) characteristics of CIGS cells at different temperatures, we investigate the temperature behavior of the shunt leakage current, and find that it can be explained by large donor trap concentrations at grain boundaries (GBs), and by a Schottky barrier at the backside contact where the GBs meets the anode metallization. We studied the I-V characteristics in the temperature range 280 K - 160 K achieving good fits of the measured I-V curves, especially for reverse bias and low forward bias, where the shunt leakage current dominates. The most important parameters determining the shunt leakage current value and its temperature dependence are the peak energy and density of the GB donor distribution, which control the inversion of GBs and the pinning of Fermi level at the anode/GB contact.
2015
978-1-4799-7944-8
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact / Sozzi, Giovanna; Menozzi, Roberto; Cavallari, Nicholas; Bronzoni, M.; Annoni, Filippo; Calicchio, M.; Mazzer, M.. - ELETTRONICO. - (2015), pp. 1-4. (Intervento presentato al convegno Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd tenutosi a New Orleans, LA, USA nel 14-19 June 2015) [10.1109/PVSC.2015.7355779].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2800999
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