The mechanisms behind the high-field degradation of Al0.25Ga0.75/GaAs power heterojunction field effect transistors (HFET) were discussed. The surface trapping effects, such as gate lag, transconductance frequency dispersion, drain current kinks and their relationship with device degradation were analyzed. A hydrodynamic model was used to show that a combination of impact ionization and surface traps accounted for the kinks in the output curves and their post-stress enhancement.
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design / Menozzi, Roberto; Sozzi, Giovanna; Verzellesi, Giovanni; Borgarino, Mattia; Lanzieri, Claudio; Canali, Claudio. - (2001), pp. 89-95. (Intervento presentato al convegno Gaas Reliability Workshop tenutosi a Baltimore, MD, usa nel 2001).
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design
Menozzi Roberto;Sozzi Giovanna;
2001-01-01
Abstract
The mechanisms behind the high-field degradation of Al0.25Ga0.75/GaAs power heterojunction field effect transistors (HFET) were discussed. The surface trapping effects, such as gate lag, transconductance frequency dispersion, drain current kinks and their relationship with device degradation were analyzed. A hydrodynamic model was used to show that a combination of impact ionization and surface traps accounted for the kinks in the output curves and their post-stress enhancement.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
