Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs HFET's and then compared with transconductance frequency dispersion measurements and studied by means of numerical simulations accounting for the occupation dynamics of surface deep-acceptor traps. We have found a clear direct correlation between the amount of gate-lag and of transconductance dispersion. The gate-lag turn-off transients of increasingly degraded devices have been accurately simulated by suitably increasing the surface trap density.
Gate-lag effects in AlGaAs/GaAs power HFET’s / M., Borgarino; Sozzi, Giovanna; A., Mazzanti; G., Verzellesi. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 41:(2001), pp. 1585-1589. [10.1016/S0026-2714(01)00191-3]
Gate-lag effects in AlGaAs/GaAs power HFET’s
SOZZI, Giovanna;
2001-01-01
Abstract
Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs HFET's and then compared with transconductance frequency dispersion measurements and studied by means of numerical simulations accounting for the occupation dynamics of surface deep-acceptor traps. We have found a clear direct correlation between the amount of gate-lag and of transconductance dispersion. The gate-lag turn-off transients of increasingly degraded devices have been accurately simulated by suitably increasing the surface trap density.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
