Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs HFET's and then compared with transconductance frequency dispersion measurements and studied by means of numerical simulations accounting for the occupation dynamics of surface deep-acceptor traps. We have found a clear direct correlation between the amount of gate-lag and of transconductance dispersion. The gate-lag turn-off transients of increasingly degraded devices have been accurately simulated by suitably increasing the surface trap density.

Gate-lag effects in AlGaAs/GaAs power HFET’s / M. BORGARINO; SOZZI G.; A. MAZZANTI; G. VERZELLESI. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 41(2001), pp. 1585-1589. [10.1016/S0026-2714(01)00191-3]

Gate-lag effects in AlGaAs/GaAs power HFET’s

SOZZI, Giovanna;
2001

Abstract

Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs HFET's and then compared with transconductance frequency dispersion measurements and studied by means of numerical simulations accounting for the occupation dynamics of surface deep-acceptor traps. We have found a clear direct correlation between the amount of gate-lag and of transconductance dispersion. The gate-lag turn-off transients of increasingly degraded devices have been accurately simulated by suitably increasing the surface trap density.
Gate-lag effects in AlGaAs/GaAs power HFET’s / M. BORGARINO; SOZZI G.; A. MAZZANTI; G. VERZELLESI. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 41(2001), pp. 1585-1589. [10.1016/S0026-2714(01)00191-3]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1462396
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