Using numerical simulations, we investigate the effect of a deep donor known to exist at EV + 1.33 eV, as a contribution to explain the large VOC deficit of Ga-rich absorbers.. We find that uniform GGI absorbers with GGI > 0.5 suffer for the presence of this deep donor, with the VOC deficit linearly increasing with GGI. On the other hand, simulations indicate that this deep donor is unlikely to be a significant performance limiter in double-graded cells.
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study / Sozzi, G.; Menozzi, R.. - ELETTRONICO. - 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC):(2020), pp. 0759-0762. (Intervento presentato al convegno 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 tenutosi a canada nel 2020) [10.1109/PVSC45281.2020.9300948].
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study
Sozzi G.
;Menozzi R.
2020-01-01
Abstract
Using numerical simulations, we investigate the effect of a deep donor known to exist at EV + 1.33 eV, as a contribution to explain the large VOC deficit of Ga-rich absorbers.. We find that uniform GGI absorbers with GGI > 0.5 suffer for the presence of this deep donor, with the VOC deficit linearly increasing with GGI. On the other hand, simulations indicate that this deep donor is unlikely to be a significant performance limiter in double-graded cells.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
