Using numerical simulations, we investigate the effect of a deep donor known to exist at EV + 1.33 eV, as a contribution to explain the large VOC deficit of Ga-rich absorbers.. We find that uniform GGI absorbers with GGI > 0.5 suffer for the presence of this deep donor, with the VOC deficit linearly increasing with GGI. On the other hand, simulations indicate that this deep donor is unlikely to be a significant performance limiter in double-graded cells.
|Titolo:||On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study|
SOZZI, Giovanna (Corresponding)
|Data di pubblicazione:||2020|
|Appare nelle tipologie:||4.1b Atto convegno Volume|