Using numerical simulations, we investigate the effect of a deep donor known to exist at EV + 1.33 eV, as a contribution to explain the large VOC deficit of Ga-rich absorbers.. We find that uniform GGI absorbers with GGI > 0.5 suffer for the presence of this deep donor, with the VOC deficit linearly increasing with GGI. On the other hand, simulations indicate that this deep donor is unlikely to be a significant performance limiter in double-graded cells.

On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study / Sozzi, G.; Menozzi, R.. - ELETTRONICO. - 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2020), pp. 0759-0762. ((Intervento presentato al convegno 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 tenutosi a canada nel 2020 [10.1109/PVSC45281.2020.9300948].

On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study

Sozzi G.;Menozzi R.
2020

Abstract

Using numerical simulations, we investigate the effect of a deep donor known to exist at EV + 1.33 eV, as a contribution to explain the large VOC deficit of Ga-rich absorbers.. We find that uniform GGI absorbers with GGI > 0.5 suffer for the presence of this deep donor, with the VOC deficit linearly increasing with GGI. On the other hand, simulations indicate that this deep donor is unlikely to be a significant performance limiter in double-graded cells.
978-1-7281-6115-0
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study / Sozzi, G.; Menozzi, R.. - ELETTRONICO. - 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2020), pp. 0759-0762. ((Intervento presentato al convegno 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 tenutosi a canada nel 2020 [10.1109/PVSC45281.2020.9300948].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2888492
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