Using numerical simulations, we investigate the effect of a deep donor known to exist at EV + 1.33 eV, as a contribution to explain the large VOC deficit of Ga-rich absorbers.. We find that uniform GGI absorbers with GGI > 0.5 suffer for the presence of this deep donor, with the VOC deficit linearly increasing with GGI. On the other hand, simulations indicate that this deep donor is unlikely to be a significant performance limiter in double-graded cells.
Titolo: | On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study |
Autori: | |
Data di pubblicazione: | 2020 |
Serie: | |
Handle: | http://hdl.handle.net/11381/2888492 |
ISBN: | 978-1-7281-6115-0 |
Appare nelle tipologie: | 4.1b Atto convegno Volume |
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