We performed deep level transient spectroscopy (DLTS), in capacitance, constant capacitance and current mode, on 5 MeV proton irradiated 4H-SiC p+-i-n diodes. The study has revealed the presence of several majority and minority traps, ranging in the 0.4-1.6 eV below the conduction band edge and in the 0.4-1.5 eV above the valence band edge. We present a comparison of the results obtained with the three modes and discuss the nature of the detected traps, in the light of previous results found in the literature. At last, the impact of the irradiation on the minority carrier lifetime is evaluated by electrical measurements.
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes / Alfieri, Giovanni; Mihaila, Andrei; Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna; Godignon, Philippe; Milan, Jose. - 897:(2017), pp. 246-249. [10.4028/www.scientific.net/MSF.897.246]
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes
PUZZANGHERA, MAURIZIO;SOZZI, Giovanna;
2017-01-01
Abstract
We performed deep level transient spectroscopy (DLTS), in capacitance, constant capacitance and current mode, on 5 MeV proton irradiated 4H-SiC p+-i-n diodes. The study has revealed the presence of several majority and minority traps, ranging in the 0.4-1.6 eV below the conduction band edge and in the 0.4-1.5 eV above the valence band edge. We present a comparison of the results obtained with the three modes and discuss the nature of the detected traps, in the light of previous results found in the literature. At last, the impact of the irradiation on the minority carrier lifetime is evaluated by electrical measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
