PUZZANGHERA, MAURIZIO
PUZZANGHERA, MAURIZIO
Dipartimento di Ingegneria e Architettura
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing
2016-01-01 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics
2016-01-01 Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
2017-01-01 Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC
2017-01-01 Nipoti, R.; Puzzanghera, M.; Canino, M. C.; Sozzi, G.
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC
2018-01-01 Nipoti, Roberta; Puzzanghera, Maurizio; Canino, Maria Concetta; Sozzi, Giovanna; Fedeli, Paolo
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area
2017-01-01 Sozzi, Giovanna; Puzzanghera, Maurizio; Chiorboli, Giovanni; Nipoti, Roberta
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters
2018-01-01 Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna; Menozzi, Roberto
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes
2017-01-01 Alfieri, Giovanni; Mihaila, Andrei; Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna; Godignon, Philippe; Milan, Jose
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing
2016-01-01 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
The role of defects on forward current in 4h-sic p-i-n diodes
2019-01-01 Sozzi, G.; Puzzanghera, M.; Menozzi, R.; Nipoti, R.
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C
2017-01-01 Nipoti, R.; Canino, M. C.; Puzzanghera, M.; Sozzi, G.