Ni/Al/Ti ohmic contacts with preserved form factor during alloying at 1000 °C, almost constant specific resistance value in the low 10-4 Ohmxcm2 decade, and a very weak temperature dependence in the range 25 - 290 °C, have been obtained on 1x 1020 cm-3 Al+implanted p-type 4H-SiC of different resistivity in the range 6 x10-2- 1 Ohmxcm2. A qualitative data analysis for understanding the hole transport mechanism through the formed metal/semiconductor interface is also shown.
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC / Nipoti, R.; Puzzanghera, M.; Canino, M. C.; Sozzi, G.. - In: ECS TRANSACTIONS. - ISSN 1938-6737. - 80:7(2017), pp. 117-122. [10.1149/08007.0117ecst]
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC
Puzzanghera, M.;Sozzi, G.
2017-01-01
Abstract
Ni/Al/Ti ohmic contacts with preserved form factor during alloying at 1000 °C, almost constant specific resistance value in the low 10-4 Ohmxcm2 decade, and a very weak temperature dependence in the range 25 - 290 °C, have been obtained on 1x 1020 cm-3 Al+implanted p-type 4H-SiC of different resistivity in the range 6 x10-2- 1 Ohmxcm2. A qualitative data analysis for understanding the hole transport mechanism through the formed metal/semiconductor interface is also shown.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
