This study shows that a thin Ni film on Al/Ti/4H-SiC metal pads allows to preserve the pad form factor during a 1000 °C/2 min treatment, provided that the Al and Ti film thicknesses are sufficiently thin. Moreover, by reducing the Al to Ti thickness ratio, droplet formation in the contact area is avoided and a mirror-like appearance is obtained. This optimal contact morphology corresponds to a specific contact resistance of few 10-4Ωcm2at room temperature on p-type 4HSiC with resistivity in the range 0.1–1 Ωcm.
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC / Nipoti, Roberta; Puzzanghera, Maurizio; Canino, Maria Concetta; Sozzi, Giovanna; Fedeli, Paolo. - 924:(2018), pp. 385-388. (Intervento presentato al convegno International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 tenutosi a usa nel 2017) [10.4028/www.scientific.net/MSF.924.385].
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC
Nipoti, Roberta
;Puzzanghera, Maurizio;Sozzi, Giovanna;Fedeli, Paolo
2018-01-01
Abstract
This study shows that a thin Ni film on Al/Ti/4H-SiC metal pads allows to preserve the pad form factor during a 1000 °C/2 min treatment, provided that the Al and Ti film thicknesses are sufficiently thin. Moreover, by reducing the Al to Ti thickness ratio, droplet formation in the contact area is avoided and a mirror-like appearance is obtained. This optimal contact morphology corresponds to a specific contact resistance of few 10-4Ωcm2at room temperature on p-type 4HSiC with resistivity in the range 0.1–1 Ωcm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
