NIPOTI, ROBERTA
NIPOTI, ROBERTA
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1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time
2016-01-01 Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R.
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts
2013-01-01 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
2013-01-01 Nipoti, R.; Scaburri, R.; Hallén, A.; Parisini, Antonella
Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication
2014-01-01 Nath, A; Parisini, Antonella; Tian, Y. L.; Rao Mulpuri, V; Nipoti, Roberta
Microwave Annealing of High Dose Al+ implanted 4H-SiC: Towards Device Fabrication
2014-01-01 Nath, A; Rao Mulpuri, V; Tian, Y. L.; Parisini, Antonella; Nipoti, Roberta
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC
2018-01-01 Nipoti, Roberta; Puzzanghera, Maurizio; Canino, Maria Concetta; Sozzi, Giovanna; Fedeli, Paolo
Titolo | Data di pubblicazione | Autore(i) | File |
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1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time | 1-gen-2016 | Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R. | |
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts | 1-gen-2013 | Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore | |
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC | 1-gen-2013 | Nipoti, R.; Scaburri, R.; Hallén, A.; Parisini, Antonella | |
Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication | 1-gen-2014 | Nath, A; Parisini, Antonella; Tian, Y. L.; Rao Mulpuri, V; Nipoti, Roberta | |
Microwave Annealing of High Dose Al+ implanted 4H-SiC: Towards Device Fabrication | 1-gen-2014 | Nath, A; Rao Mulpuri, V; Tian, Y. L.; Parisini, Antonella; Nipoti, Roberta | |
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC | 1-gen-2018 | Nipoti, Roberta; Puzzanghera, Maurizio; Canino, Maria Concetta; Sozzi, Giovanna; Fedeli, Paolo |