NIPOTI, ROBERTA

NIPOTI, ROBERTA  

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Risultati 1 - 6 di 6 (tempo di esecuzione: 0.012 secondi).
Titolo Data di pubblicazione Autore(i) File
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 1-gen-2016 Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R.
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 1-gen-2013 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC 1-gen-2013 Nipoti, R.; Scaburri, R.; Hallén, A.; Parisini, Antonella
Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication 1-gen-2014 Nath, A; Parisini, Antonella; Tian, Y. L.; Rao Mulpuri, V; Nipoti, Roberta
Microwave Annealing of High Dose Al+ implanted 4H-SiC: Towards Device Fabrication 1-gen-2014 Nath, A; Rao Mulpuri, V; Tian, Y. L.; Parisini, Antonella; Nipoti, Roberta
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 1-gen-2018 Nipoti, Roberta; Puzzanghera, Maurizio; Canino, Maria Concetta; Sozzi, Giovanna; Fedeli, Paolo