Previous studies have shown that the electrical activation of a given implanted Al concentration in 4H-SiC increases with the increasing of the post implantation annealing temperature up to 1950-2100°C and different annealing times in the range 0.5-5 min. This study shows that, at 1950°C, the electrical activation of Al implanted in 4H-SiC increases with the increase of the annealing time up to attain saturation for annealing times longer than 22 min. Samples were obtained from the same Al implanted HPSI 4H-SiC wafer with an implanted Al concentration lower than the Al solubility limit in 4H-SiC at the annealing temperature of 1950°C. The annealing time was varied in the range 5-40 min.
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time / Fedeli, P.; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R.. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8769. - 5:9(2016), pp. P534-P539. [10.1149/2.0361609jss]
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