PARISINI, Antonella

PARISINI, Antonella  

Dipartimento di Scienze Matematiche, Fisiche e Informatiche  

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Titolo Data di pubblicazione Autore(i) File
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 1-gen-2016 Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 1-gen-2016 Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R.
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 1-gen-2020 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni
About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al) 1-gen-2015 Parisini, Antonella; Nipoti, Roberta
Admittance spectroscopy of GaAs/InGaP MQW structures 1-gen-2008 E., Gombia; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; M., Longo
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 1-gen-2013 M., Baldini; Gombia, Enos; Parisini, Antonella; Ghezzi, Carlo; Gorni, Marco
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 1-gen-2013 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 1-gen-2015 Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U.
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 1-gen-1991 Baraldi, Andrea; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.
Analysis of persistent photoconductivity in sulphur doped GaSb 1-gen-1995 Baraldi, Andrea; Ghezzi, C.; Parisini, Antonella; Hubik, P.; Mares, J. J.; Kristofik, J.
Analysis of the electrical activation data in thermally annealed implanted Al/4H–SiC systems: A novel approach based on cooperativity 1-gen-2022 Boldrini, V.; Parisini, A.; Pieruccini, M.
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation 1-gen-2013 Parisini, Antonella; R., Nipoti
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 1-gen-2016 Parisini, Antonella; Fornari, Roberto
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 1-gen-2010 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
Assessment of phonon scattering-related mobility in β-Ga2O3 1-gen-2018 Parisini, A.; Ghosh, K.; Singisetti, U.; Fornari, R.
Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al) 1-gen-2019 Parisini, Antonella; Nipoti, Roberta
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 1-gen-2021 Montedoro, V.; Torres, A.; Dadgostar, S.; Jimenez, J.; Bosi, M.; Parisini, A.; Fornari, R.
CdIn2S2Se2: a new semiconducting compound 1-gen-1986 C., Paracchini; Parisini, Antonella; Tarricone, Luciano
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 1-gen-1994 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 1-gen-1996 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.