IRIS

PARISINI, Antonella

PARISINI, Antonella  

Dipartimento di Scienze Matematiche, Fisiche e Informatiche  

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Risultati 1 - 20 di 138 (tempo di esecuzione: 0.041 secondi).
Titolo Data di pubblicazione Autore(i) File
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 1-gen-2008 R., Jakomin; Parisini, Antonella; Tarricone, Luciano; S., Vantaggio; B., Fraboni
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 1-gen-2016 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
(Invited) Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time 1-gen-2019 Nipoti, Roberta; Parisini, Antonella
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 1-gen-2016 Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 1-gen-2016 Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R.
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 1-gen-2020 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 1-gen-2020 Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
A MREI model for the zincblende-like phonons in CdGa2(SxSe1-x)4 mixed crystals 1-gen-1985 Parisini, Antonella; Lottici, Pier Paolo
A shallow state coexisting with the DX center in Te-doped AlGaSb 1-gen-1998 Baraldi, Andrea; Franchi, S.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano
A study of acceptor levels induced by intrinsic (carbon) and extrinsic (zinc) doping in GaAs epitaxial layers, MOVPE-grown by liquid metalorganic sources 1-gen-2004 Begotti, M; Ghezzi, C; Longo, M; Magnanini, R; Parisini, Antonella; Pernechele, C; Tarricone, L; Vantaggio, R; Gombia, E; Mosca, R; Cova, Paolo; Delmonte, Nicola
A study of the electrical properties controlled by residual acceptors in gallium antimonide 1-gen-1993 F., Meinardi; Parisini, Antonella; Tarricone, Luciano
About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al) 1-gen-2015 Parisini, Antonella; Nipoti, Roberta
Admittance spectroscopy of GaAs/InGaP MQW structures 1-gen-2008 E., Gombia; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; M., Longo
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 1-gen-2013 M., Baldini; Gombia, Enos; Parisini, Antonella; Ghezzi, Carlo; Gorni, Marco
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 1-gen-2013 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 1-gen-2015 Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U.
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 1-gen-2022 Parisini, Antonella; DI RENZO, Francesco; Pontiroli, Daniele; Pavesi, Maura
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 1-gen-1991 Baraldi, Andrea; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.
Analysis of persistent photoconductivity in sulphur doped GaSb 1-gen-1995 Baraldi, Andrea; Ghezzi, C.; Parisini, Antonella; Hubik, P.; Mares, J. J.; Kristofik, J.
Analysis of the electrical activation data in thermally annealed implanted Al/4H–SiC systems: A novel approach based on cooperativity 1-gen-2022 Boldrini, V.; Parisini, A.; Pieruccini, M.