In this work, the conduction mechanisms across novel contacts to epitaxial films of pure phase epsilon-Ga2O3 (ε-Ga2O3) were investigated. Different structures made by sputtered metal and oxide thin films were tested as electrical contacts. I-V characteristics show heterogeneous behaviors, revealing different conduction mechanisms according to the applied bias. The results are interesting as they offer a viable method to obtain ohmic contacts on ε-Ga2O3, which is less studied than other gallium oxide polymorphs but may find application in new electronic and optoelectronic devices. The newly developed ohmic contacts allow to fabricate simple test devices and assess the potential of this material.
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