VANTAGGIO, Salvatore
VANTAGGIO, Salvatore
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time
2016-01-01 Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect
2020-01-01 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism
2020-01-01 Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts
2013-01-01 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC
2015-01-01 Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U.
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices
2010-01-01 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics
2022-01-01 Hidouri, T.; Parisini, A.; Ferrari, C.; Orsi, D.; Baraldi, A.; Vantaggio, S.; Nasr, S.; Bosio, A.; Pavesi, M.; Saidi, F.; Fornari, R.
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers
2022-01-01 Parisini, A.; Bosio, A.; von Bardeleben, H. J.; Jimenez, J.; Dadgostar, S.; Pavesi, M.; Baraldi, A.; Vantaggio, S.; Fornari, R.
Electrical characterization of a buried GaSb p-n junction controlled by native defects
2014-01-01 Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers
2022-01-01 Borelli, Carmine; Bosio, Alessio; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies
2022-01-01 Nipoti, Roberta; Boldrini, Virginia; Canino, Mariaconcetta; Tamarri, Fabrizio; Vantaggio, Salvatore; Parisini, Antonella
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications
2011-01-01 M., Baldini; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; E., Gombia; A., Motta; A., Gasparotto
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3
2023-01-01 Rajabi Kalvani, Payam; Parisini, Antonella; Sozzi, Giovanna; Borelli, Carmine; Mazzolini, Piero; Bierwagen, Oliver; Vantaggio, Salvatore; Egbo, Kingsley; Bosi, Matteo; Seravalli, Luca; Fornari, Roberto
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
2020-01-01 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices
2009-01-01 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Baldini, M.; Vantaggio, Salvatore; Gombia, E.
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion
2021-01-01 Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Matteobosi, ; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy
2012-01-01 R., Jakomin; Parisini, Antonella; Tarricone, Luciano; M., Longo; B., Fraboni; Vantaggio, Salvatore
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers
2023-01-01 Pasini, Stefano; Spoltore, Donato; Parisini, Antonella; Foti, Gianluca; Marchionna, Stefano; Vantaggio, Salvatore; Fornari, Roberto; Bosio, Alessio
Si and Sn doping of ε-Ga2O3 layers
2019-01-01 Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R.
Sol-gel growth and characterization of In2O3 thin films
2018-01-01 Palomares-Sanchez, Salvador A.; Watts, Bernard E.; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike | |
| 3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect | 1-gen-2020 | Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni | |
| A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism | 1-gen-2020 | Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto | |
| Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts | 1-gen-2013 | Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore | |
| Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC | 1-gen-2015 | Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U. | |
| Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices | 1-gen-2010 | Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia | |
| Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics | 1-gen-2022 | Hidouri, T.; Parisini, A.; Ferrari, C.; Orsi, D.; Baraldi, A.; Vantaggio, S.; Nasr, S.; Bosio, A.; Pavesi, M.; Saidi, F.; Fornari, R. | |
| Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers | 1-gen-2022 | Parisini, A.; Bosio, A.; von Bardeleben, H. J.; Jimenez, J.; Dadgostar, S.; Pavesi, M.; Baraldi, A.; Vantaggio, S.; Fornari, R. | |
| Electrical characterization of a buried GaSb p-n junction controlled by native defects | 1-gen-2014 | Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo | |
| Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers | 1-gen-2022 | Borelli, Carmine; Bosio, Alessio; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto | |
| Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies | 1-gen-2022 | Nipoti, Roberta; Boldrini, Virginia; Canino, Mariaconcetta; Tamarri, Fabrizio; Vantaggio, Salvatore; Parisini, Antonella | |
| Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications | 1-gen-2011 | M., Baldini; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; E., Gombia; A., Motta; A., Gasparotto | |
| Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 | 1-gen-2023 | Rajabi Kalvani, Payam; Parisini, Antonella; Sozzi, Giovanna; Borelli, Carmine; Mazzolini, Piero; Bierwagen, Oliver; Vantaggio, Salvatore; Egbo, Kingsley; Bosi, Matteo; Seravalli, Luca; Fornari, Roberto | |
| Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time | 1-gen-2020 | Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike | |
| Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices | 1-gen-2009 | Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Baldini, M.; Vantaggio, Salvatore; Gombia, E. | |
| n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion | 1-gen-2021 | Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Matteobosi, ; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto | |
| On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy | 1-gen-2012 | R., Jakomin; Parisini, Antonella; Tarricone, Luciano; M., Longo; B., Fraboni; Vantaggio, Salvatore | |
| Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers | 1-gen-2023 | Pasini, Stefano; Spoltore, Donato; Parisini, Antonella; Foti, Gianluca; Marchionna, Stefano; Vantaggio, Salvatore; Fornari, Roberto; Bosio, Alessio | |
| Si and Sn doping of ε-Ga2O3 layers | 1-gen-2019 | Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R. | |
| Sol-gel growth and characterization of In2O3 thin films | 1-gen-2018 | Palomares-Sanchez, Salvador A.; Watts, Bernard E.; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto |