VANTAGGIO, Salvatore

VANTAGGIO, Salvatore  

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Risultati 1 - 20 di 22 (tempo di esecuzione: 0.34 secondi).
Titolo Data di pubblicazione Autore(i) File
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 1-gen-2016 Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 1-gen-2020 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 1-gen-2013 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 1-gen-2015 Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U.
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 1-gen-2010 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 1-gen-2022 Hidouri, T.; Parisini, A.; Ferrari, C.; Orsi, D.; Baraldi, A.; Vantaggio, S.; Nasr, S.; Bosio, A.; Pavesi, M.; Saidi, F.; Fornari, R.
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 1-gen-2022 Parisini, A.; Bosio, A.; von Bardeleben, H. J.; Jimenez, J.; Dadgostar, S.; Pavesi, M.; Baraldi, A.; Vantaggio, S.; Fornari, R.
Electrical characterization of a buried GaSb p-n junction controlled by native defects 1-gen-2014 Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 1-gen-2022 Borelli, Carmine; Bosio, Alessio; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 1-gen-2022 Nipoti, Roberta; Boldrini, Virginia; Canino, Mariaconcetta; Tamarri, Fabrizio; Vantaggio, Salvatore; Parisini, Antonella
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 1-gen-2011 M., Baldini; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; E., Gombia; A., Motta; A., Gasparotto
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 1-gen-2020 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 1-gen-2020 Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 1-gen-2009 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Baldini, M.; Vantaggio, Salvatore; Gombia, E.
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 1-gen-2021 Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Matteobosi, ; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 1-gen-2012 R., Jakomin; Parisini, Antonella; Tarricone, Luciano; M., Longo; B., Fraboni; Vantaggio, Salvatore
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 1-gen-2021 Burganova, Regina; Parisini, Antonella; Vantaggio, Salvatore; Sajapin, Roman; Berzina, Tatiana
Si and Sn doping of ε-Ga2O3 layers 1-gen-2019 Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R.
Sol-gel growth and characterization of In2O3 thin films 1-gen-2018 Palomares-Sanchez, Salvador A.; Watts, Bernard E.; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 1-gen-2009 Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; C., Bocchi; F., Germini; L., Lazzarini