The good control of the n-type doping is a key issue for the fabrication of efficient devices based on ε-Ga2O3 epilayers. In this work we studied the possibility of doping the ε-Ga2O3 thin films, epitaxially grown on c-oriented sapphire by metal-organic chemical vapor deposition, by means of a post-deposition treatment. For the first time, the n-type doping was achieved by depositing a tin-rich SnO2 film on top of the ε-Ga2O3 layer and keeping this bi-layer system for 4 h at a temperature of 600 °C in an evacuated furnace. The diffusion of Sn atoms into the ε-Ga2O3 film is evidenced by time-of-flight secondary-ion mass spectrometry depth profiles. Room-temperature resistivity of the order of 1 Ω•cm is obtained and the electrical characterization revealed a conduction mechanism based on variable range hopping, according to the Mott's model.
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion / Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Matteobosi, ; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto. - In: ACTA MATERIALIA. - ISSN 1359-6454. - 210:(2021), p. 116848. [10.1016/j.actamat.2021.116848]
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion
Alessio Bosio
Investigation
;Antonella ParisiniConceptualization
;Carmine BorelliInvestigation
;Laura FornasiniResources
;Salvatore VantaggioMembro del Collaboration Group
;Roberto FornariSupervision
2021-01-01
Abstract
The good control of the n-type doping is a key issue for the fabrication of efficient devices based on ε-Ga2O3 epilayers. In this work we studied the possibility of doping the ε-Ga2O3 thin films, epitaxially grown on c-oriented sapphire by metal-organic chemical vapor deposition, by means of a post-deposition treatment. For the first time, the n-type doping was achieved by depositing a tin-rich SnO2 film on top of the ε-Ga2O3 layer and keeping this bi-layer system for 4 h at a temperature of 600 °C in an evacuated furnace. The diffusion of Sn atoms into the ε-Ga2O3 film is evidenced by time-of-flight secondary-ion mass spectrometry depth profiles. Room-temperature resistivity of the order of 1 Ω•cm is obtained and the electrical characterization revealed a conduction mechanism based on variable range hopping, according to the Mott's model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.