FORNARI, Roberto

FORNARI, Roberto  

Dipartimento di Scienze Matematiche, Fisiche e Informatiche  

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A new approach to free-standing GaN using beta-Ga2O3 as a substrate 1-gen-2012 K., Kachel; M., Korytov; D., Gogova; Z., Galazka; M., Albrecht; R., Zwierz; D., Siche; S., Golka; A., Kwasniewski; M., Schmidbauer; Fornari, Roberto
A new approach to grow C-doped GaN thick epitaxial layers 1-gen-2011 D., Gogova; G. Y., Rudko; D., Siche; M., Albrecht; K., Irmscher; H. . ., J.; Fornari, Roberto
A new method for calculation of island-size distribution in submonolayer epitaxial growth 1-gen-2011 P. P., Petrov; W., Miller; U., Rehse; Fornari, Roberto
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 1-gen-2014 Z., Galazka; R., Uecker; Fornari, Roberto
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 1-gen-1997 Fornari, Roberto; E., Gilioli; G., Mignoni; M., Masi
A study of Indium incorporation efficiency in InGaN grown by MOVPE 1-gen-2004 M., Bosi; Fornari, Roberto
A study of iron incorporation in LEG-grown indium phosphide 1-gen-1996 Fornari, Roberto; E., Gilioli; M., Moriglioni; M., Thirumavalavan; A., Zappettini
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 1-gen-1985 Fornari, Roberto; P., Franzosi; G., Salviati; C., Ferrari; Ghezzi, Carlo
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 1-gen-1991 Fornari, Roberto; N., Tchandjou; P., Gall; J. M., Lussert
A vertical reactor for deposition of gallium nitride 1-gen-2000 G., Attolini; S., Carra; F. D., Muzio; Fornari, Roberto; M., Masi; C., Pelosi
AFM observation of GaN grown on different substrates at low temperatures 1-gen-1999 Cao, Chuanbao; G., Attolini; Fornari, Roberto; C., Pelosi
Aligned AlN nanowires by self-organized vapor-solid growth 1-gen-2009 G. R., Yazdi; P. O., A.; D., Gogova; Fornari, Roberto; L., Hultman; M., Syvajarvi; R., Yakimova
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 1-gen-2016 Parisini, Antonella; Fornari, Roberto
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 1-gen-2008 M., Neubert; A., Kwasniewski; Fornari, Roberto
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers 1-gen-1996 Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.
Annealing-related phenomena in bulk semi-insulating indium phosphide 1-gen-1998 J., Jimenez; Fornari, Roberto
Assessment of phonon scattering-related mobility in β-Ga2O3 1-gen-2018 Parisini, A.; Ghosh, K.; Singisetti, U.; Fornari, R.
Boron as an anti-surfactant in sublimation growth of AlN single crystals 1-gen-2006 M., Albrecht; J., Wollweber; M., Rossberg; M., Schmidbauer; C., Hartmann; Fornari, Roberto
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 1-gen-2009 F. M., Kiessling; M., Albrecht; K., Irmscher; M., Rossberg; P., Rudolph; W., Ulrici; Fornari, Roberto
Bridgman-grown zinc oxide single crystals 1-gen-2006 D., Schulz; S., Ganschow; D., Klimm; M., Neubert; M., Rossberg; M., Schmidbauer; Fornari, Roberto