As-grown semiconducting InP wafers containing iron at a level between 5 and 8×1015 cm-3 were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900 °C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers / Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.. - (1996), pp. 9-12. (Intervento presentato al convegno 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 tenutosi a Toulouse, Fr, nel 1996).
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers
Fornari R.
Writing – Original Draft Preparation
;
1996-01-01
Abstract
As-grown semiconducting InP wafers containing iron at a level between 5 and 8×1015 cm-3 were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900 °C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
