As-grown semiconducting InP wafers containing iron at a level between 5 and 8×1015 cm-3 were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900 °C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.

Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers / Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.. - (1996), pp. 9-12. (Intervento presentato al convegno 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 tenutosi a Toulouse, Fr, nel 1996).

Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers

Fornari R.
Writing – Original Draft Preparation
;
1996-01-01

Abstract

As-grown semiconducting InP wafers containing iron at a level between 5 and 8×1015 cm-3 were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900 °C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.
1996
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers / Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.. - (1996), pp. 9-12. (Intervento presentato al convegno 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 tenutosi a Toulouse, Fr, nel 1996).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2931677
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