This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.

1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time / Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike. - STAMPA. - 858:(2016), pp. 523-526. ((Intervento presentato al convegno 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 tenutosi a ita nel 2015 [10.4028/www.scientific.net/MSF.858.523].

1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time

PARISINI, Antonella;VANTAGGIO, Salvatore;
2016-01-01

Abstract

This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.
9783035710427
9783035710427
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time / Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike. - STAMPA. - 858:(2016), pp. 523-526. ((Intervento presentato al convegno 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 tenutosi a ita nel 2015 [10.4028/www.scientific.net/MSF.858.523].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2814671
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