Electrical measurements and numerical simulations of Ion Implanted 4H-SiC PiN diodes

In this thesis work 4H–SiC ion implanted PiN diodes are studied and characterised in detail. Electrical measurements (current–voltage curves and lifetime measurements) and Numerical simulations are performed with the aim to better understand physical phenomena which arises from the periphery of these diodes. This analysis is relevant as it is well known that perimeter currents affect performances of SiC devices.