The effect of a 1500 °C treatment on 1x1020cm-3 Al+ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 °C is studied in this work. Up to 240 min annealing time at 1500 °C, the Al electrical activation reached at 1850-1950 °C is preserved.
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C / Nipoti, R.; Canino, M. C.; Puzzanghera, M.; Sozzi, G.. - In: ECS TRANSACTIONS. - ISSN 1938-6737. - 80:(2017), pp. 101-105. [10.1149/08007.0101ecst]
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C
Puzzanghera, M.;Sozzi, G.
2017-01-01
Abstract
The effect of a 1500 °C treatment on 1x1020cm-3 Al+ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 °C is studied in this work. Up to 240 min annealing time at 1500 °C, the Al electrical activation reached at 1850-1950 °C is preserved.File in questo prodotto:
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