Abstract: This paper shows a physical approach to large-signal electro-thermal simulation of AlGaN/GaN HEMTs. The dynamic thermal behavior of the HEMT is described by a 3D network of thermal resistances and capacitances describing the physical structure of the HEMT, and including features such as the thermal boundary resistance between GaN and SiC, and the die-attach, as well as temperature non-uniformity along the gate finger. The thermal network is self-consistently coupled inside ADS with an electro-thermal large-signal model.
Titolo: | Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating |
Autori: | |
Data di pubblicazione: | 2011 |
Handle: | http://hdl.handle.net/11381/2359075 |
ISBN: | 9781457707087 |
Appare nelle tipologie: | 4.1b Atto convegno Volume |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.