Abstract: This paper shows a physical approach to large-signal electro-thermal simulation of AlGaN/GaN HEMTs. The dynamic thermal behavior of the HEMT is described by a 3D network of thermal resistances and capacitances describing the physical structure of the HEMT, and including features such as the thermal boundary resistance between GaN and SiC, and the die-attach, as well as temperature non-uniformity along the gate finger. The thermal network is self-consistently coupled inside ADS with an electro-thermal large-signal model.
|Titolo:||Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating|
|Data di pubblicazione:||2011|
|Appare nelle tipologie:||4.1b Atto convegno Volume|