Abstract: This paper shows a physical approach to large-signal electro-thermal simulation of AlGaN/GaN HEMTs. The dynamic thermal behavior of the HEMT is described by a 3D network of thermal resistances and capacitances describing the physical structure of the HEMT, and including features such as the thermal boundary resistance between GaN and SiC, and the die-attach, as well as temperature non-uniformity along the gate finger. The thermal network is self-consistently coupled inside ADS with an electro-thermal large-signal model.
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating / Bernardoni, Mirko; Delmonte, Nicola; Sozzi, Giovanna; Menozzi, Roberto. - (2011), pp. 171-174. (Intervento presentato al convegno 41st European Solid-State Device Research Conf. (ESSDERC 2011) tenutosi a Helsinki, Finlandia nel 12-16 settembre 2011) [10.1109/ESSDERC.2011.6044207].
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating
BERNARDONI, Mirko;DELMONTE, Nicola;SOZZI, Giovanna;MENOZZI, Roberto
2011-01-01
Abstract
Abstract: This paper shows a physical approach to large-signal electro-thermal simulation of AlGaN/GaN HEMTs. The dynamic thermal behavior of the HEMT is described by a 3D network of thermal resistances and capacitances describing the physical structure of the HEMT, and including features such as the thermal boundary resistance between GaN and SiC, and the die-attach, as well as temperature non-uniformity along the gate finger. The thermal network is self-consistently coupled inside ADS with an electro-thermal large-signal model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
