This paper presents a detailed physical investigation of trapping effects in GaAs power HFETs. Two-dimensional numerical simulations, performed using a hydrodynamic model that includes impact ionization, are compared with experimental results of fresh as well as hot-carrier-stressed HFETs in order to gain insight of intertwined phenomena such as the kink in the dc output curves, the hot-carrier degradation of the drain current, and the impact-ionization-dominated reverse gate current. Thoroughly consistent results show that: 1) the kink effect is dominated by the traps at the source-gate recess surface; and 2) as far as the hot-carrier degradation is concerned, only a simultaneous increase of the trap density at the drain-gate recess surface and at the channel-buffer interface (again at the drain side of the channel) is able to account for the simultaneous decrease of the drain current and the increase of the impact-ionization-dominated reverse gate current

Physical investigation of trap-related effects in power HFETs and their reliability implications / MAZZANTI A.; VERZELLESI G.; SOZZI G.; MENOZZI R.; LANZIERI C.; CANALI C.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 2(2002), pp. 65-71. [10.1109/TDMR.2002.804512]

Physical investigation of trap-related effects in power HFETs and their reliability implications

SOZZI, Giovanna;MENOZZI, Roberto;
2002

Abstract

This paper presents a detailed physical investigation of trapping effects in GaAs power HFETs. Two-dimensional numerical simulations, performed using a hydrodynamic model that includes impact ionization, are compared with experimental results of fresh as well as hot-carrier-stressed HFETs in order to gain insight of intertwined phenomena such as the kink in the dc output curves, the hot-carrier degradation of the drain current, and the impact-ionization-dominated reverse gate current. Thoroughly consistent results show that: 1) the kink effect is dominated by the traps at the source-gate recess surface; and 2) as far as the hot-carrier degradation is concerned, only a simultaneous increase of the trap density at the drain-gate recess surface and at the channel-buffer interface (again at the drain side of the channel) is able to account for the simultaneous decrease of the drain current and the increase of the impact-ionization-dominated reverse gate current
Physical investigation of trap-related effects in power HFETs and their reliability implications / MAZZANTI A.; VERZELLESI G.; SOZZI G.; MENOZZI R.; LANZIERI C.; CANALI C.. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 2(2002), pp. 65-71. [10.1109/TDMR.2002.804512]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1457081
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