Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design / Menozzi, R., Sozzi, G., G., V., M., B., C., L., C., C.. - (2001), pp. 89-95. (2001 GaAs Reliability Workshop Baltimore, MD (USA) 21 Oct. 2001).
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design
MENOZZI, Roberto;SOZZI, Giovanna;
2001-01-01
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