This work shows a detailed comparison of the degradation caused by off-state and on-state breakdown conditions in power AlGaAs/GaAs HFET's. Stress experiments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off-state stress, due to more pronounced electron heating at any fixed value of gate reverse current. The degradation modes include V-T and R-D increase and l(DSS) and g(m) reduction.
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