This work shows a detailed comparison of the degradation caused by off-state and on-state breakdown conditions in power AlGaAs/GaAs HFET's. Stress experiments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off-state stress, due to more pronounced electron heating at any fixed value of gate reverse current. The degradation modes include V-T and R-D increase and l(DSS) and g(m) reduction.
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions / Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Cetronio, A.; Canali, C.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 39:(1999), pp. 1055-1060. [10.1016/S0026-2714(99)00146-8]
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions
SOZZI, Giovanna;MENOZZI, Roberto;
1999-01-01
Abstract
This work shows a detailed comparison of the degradation caused by off-state and on-state breakdown conditions in power AlGaAs/GaAs HFET's. Stress experiments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off-state stress, due to more pronounced electron heating at any fixed value of gate reverse current. The degradation modes include V-T and R-D increase and l(DSS) and g(m) reduction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
