This work shows a detailed comparison of the degradation caused by off-state and on-state breakdown conditions in power AlGaAs/GaAs HFET's. Stress experiments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off-state stress, due to more pronounced electron heating at any fixed value of gate reverse current. The degradation modes include V-T and R-D increase and l(DSS) and g(m) reduction.

Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions / DIECI D.; SOZZI G.; MENOZZI R.; LANZIERI C.; CETRONIO A.; CANALI C.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 39(1999), pp. 1055-1060. [10.1016/S0026-2714(99)00146-8]

Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions

SOZZI, Giovanna;MENOZZI, Roberto;
1999

Abstract

This work shows a detailed comparison of the degradation caused by off-state and on-state breakdown conditions in power AlGaAs/GaAs HFET's. Stress experiments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off-state stress, due to more pronounced electron heating at any fixed value of gate reverse current. The degradation modes include V-T and R-D increase and l(DSS) and g(m) reduction.
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions / DIECI D.; SOZZI G.; MENOZZI R.; LANZIERI C.; CETRONIO A.; CANALI C.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 39(1999), pp. 1055-1060. [10.1016/S0026-2714(99)00146-8]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1457073
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