The main issues this work addresses, with reference to commercial GaAs PHEMTs, are the temperature dependence of the off-state breakdown voltage (BVDG), the physical mechanisms that determine it, and the relationship between BVDG and device degradation and failure, as determined by accelerated step-stress performed at temperatures ranging from 25 to 100°C. BVDG is seen to decrease with temperature between room temperature and 160°C. Temperature-dependent analysis of the gate leakage current indicates that thermionic-field emission and thermionic emission over a field-dependent barrier are the limiting mechanisms for off-state breakdown. Room-temperature, hot carrier step-stress tests with 24 h step duration show reduced IDSS after the stress and a tight correlation between the BVDG measured at IG = - 1 mA/mm and the stress bias producing substantial device degradation or catastrophic failure. Shorter (2 h) step stress experiments carried out between 25 and 100°C again show a tight correlation between the BVDG measured at IG = - 1 mA/mm and the stress bias producing dramatic degradation or failure. This correlation, coupled with the negligible temperature dependence of the breakdown voltage in this temperature range, results in temperature-independent device degradation.
Temperature-dependent breakdown and hot carrier stress of PHEMTs / Cova, Paolo; Delmonte, Nicola; Sozzi, Giovanna; Menozzi, Roberto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 44:(2004), pp. 1381-1385. [10.1016/j.microrel.2004.07.016]
Temperature-dependent breakdown and hot carrier stress of PHEMTs
COVA, Paolo;DELMONTE, Nicola;SOZZI, Giovanna;MENOZZI, Roberto
2004-01-01
Abstract
The main issues this work addresses, with reference to commercial GaAs PHEMTs, are the temperature dependence of the off-state breakdown voltage (BVDG), the physical mechanisms that determine it, and the relationship between BVDG and device degradation and failure, as determined by accelerated step-stress performed at temperatures ranging from 25 to 100°C. BVDG is seen to decrease with temperature between room temperature and 160°C. Temperature-dependent analysis of the gate leakage current indicates that thermionic-field emission and thermionic emission over a field-dependent barrier are the limiting mechanisms for off-state breakdown. Room-temperature, hot carrier step-stress tests with 24 h step duration show reduced IDSS after the stress and a tight correlation between the BVDG measured at IG = - 1 mA/mm and the stress bias producing substantial device degradation or catastrophic failure. Shorter (2 h) step stress experiments carried out between 25 and 100°C again show a tight correlation between the BVDG measured at IG = - 1 mA/mm and the stress bias producing dramatic degradation or failure. This correlation, coupled with the negligible temperature dependence of the breakdown voltage in this temperature range, results in temperature-independent device degradation.File | Dimensione | Formato | |
---|---|---|---|
reprint_MIC_REL_04_PHEMT.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
564.48 kB
Formato
Adobe PDF
|
564.48 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.