By comparing simulated and measured currentvoltage (J-V) characteristics of a high efficiency Cu(In,Ga)Se2 (CIGS) solar cell, we investigate the effect of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of the J-V curves with temperature. We simulate the J-V characteristics in the temperature range 300 K - 100 K, achieving good fits with measurements by describing the transport of electrons over the barrier at the ZnO/CdS interface by the thermionic-emission theory, and including a Schottky contact at the back CIGS/Mo interface.
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells / Sozzi, Giovanna; Di Napoli, Simone; Menozzi, Roberto; Werner, Florian; Siebentritt, Susanne; Jackson, Philip; Witte, Wolfram. - 2017-:34(2017), pp. 2205-2208. (Intervento presentato al convegno 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 tenutosi a Washington Marriott Wardman Park, 2660 Woodley Road NW, usa nel 2017) [10.1021/acsami.8b08076].
Influence of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of J-V curves of CIGS solar cells
Sozzi, Giovanna
;Di Napoli, Simone;Menozzi, Roberto;
2017-01-01
Abstract
By comparing simulated and measured currentvoltage (J-V) characteristics of a high efficiency Cu(In,Ga)Se2 (CIGS) solar cell, we investigate the effect of conduction band offsets at window/buffer and buffer/absorber interfaces on the roll-over of the J-V curves with temperature. We simulate the J-V characteristics in the temperature range 300 K - 100 K, achieving good fits with measurements by describing the transport of electrons over the barrier at the ZnO/CdS interface by the thermionic-emission theory, and including a Schottky contact at the back CIGS/Mo interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
