The “photo-gain effect” amplifying the DC photocurrent of κ-Ga2O3 UV-C photoresistors is analyzed by means of 2D numerical simulations and linked to the capture of photogenerated holes by deep donor levels, probably associated with oxygen vacancies. The resulting ionization of the deep donors leads to an increase in the electron density, hence to enhanced conductivity under illumination.
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes / Asteriti, Andrea; Verzellesi, Giovanni; Sozzi, Giovanna; Baraldi, Andrea; Mazzolini, Piero; Moumen, Abderrahim; Parisini, Antonella; Pavesi, Maura; Bosi, Matteo; Mosca, Roberto; Seravalli, Luca; Fornari, Roberto. - In: PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - ISSN 0370-1972. - (2025). [10.1002/pssb.202400581]
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes
Asteriti, Andrea;Sozzi, Giovanna;Baraldi, Andrea;Mazzolini, Piero;Moumen, Abderrahim;Parisini, Antonella;Pavesi, Maura;Bosi, Matteo;Fornari, Roberto
2025-01-01
Abstract
The “photo-gain effect” amplifying the DC photocurrent of κ-Ga2O3 UV-C photoresistors is analyzed by means of 2D numerical simulations and linked to the capture of photogenerated holes by deep donor levels, probably associated with oxygen vacancies. The resulting ionization of the deep donors leads to an increase in the electron density, hence to enhanced conductivity under illumination.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
