Simulations were conducted to investigate the effects of bulk and interface recombination on the photovoltaic performance of a wide-bandgap CuGaSe2 (CGS) solar cell featuring a standard n-side stack of ZnO:Al/i-ZnO/CdS. The impact of replacing the CdS buffer layer with Zn1-xSnxO (ZTO) was tested for two different Sn compositions, revealing that the optimal composition is Zn0.8Sn0.2O. The performance of CGS solar cells employing the alternative ZTO buffer layer was found to improve compared to that of cells utilizing the traditional CdS buffer layer, under identical conditions of bulk carrier lifetimes in CGS and recombination rates at the buffer/absorber interface.
Impact of Bulk and Interface Recombination on Wide-Bandgap CGS Solar Cells: Numerical Analysis of CdS and ZTO Buffer Layers / Sozzi, Giovanna; Moisè, Enrico; Perini, Lorenzo. - (2025), pp. 0631-0634. ( 53rd IEEE Photovoltaic Specialists Conference, PVSC 2025 can 2025) [10.1109/pvsc59419.2025.11132924].
Impact of Bulk and Interface Recombination on Wide-Bandgap CGS Solar Cells: Numerical Analysis of CdS and ZTO Buffer Layers
Sozzi, Giovanna
;Perini, Lorenzo
2025-01-01
Abstract
Simulations were conducted to investigate the effects of bulk and interface recombination on the photovoltaic performance of a wide-bandgap CuGaSe2 (CGS) solar cell featuring a standard n-side stack of ZnO:Al/i-ZnO/CdS. The impact of replacing the CdS buffer layer with Zn1-xSnxO (ZTO) was tested for two different Sn compositions, revealing that the optimal composition is Zn0.8Sn0.2O. The performance of CGS solar cells employing the alternative ZTO buffer layer was found to improve compared to that of cells utilizing the traditional CdS buffer layer, under identical conditions of bulk carrier lifetimes in CGS and recombination rates at the buffer/absorber interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
