The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs / TEDIOSI E.; BORGARINO M.; VERZELLESI G.; SOZZI G.; MENOZZI R.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - 37(2001), pp. 719-720. [10.1049/el:20010478]

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs

SOZZI, Giovanna;MENOZZI, Roberto
2001

Abstract

The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs / TEDIOSI E.; BORGARINO M.; VERZELLESI G.; SOZZI G.; MENOZZI R.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - 37(2001), pp. 719-720. [10.1049/el:20010478]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1457086
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