The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs / Tediosi, E.; Borgarino, M.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - 37:(2001), pp. 719-720. [10.1049/el:20010478]
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs
SOZZI, Giovanna;MENOZZI, Roberto
2001-01-01
Abstract
The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density.File in questo prodotto:
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