We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.

Modeling of thin-film Cu(In,Ga)Se2 solar cells / Troni, Fabrizio; F., Dodi; Sozzi, Giovanna; Menozzi, Roberto. - (2010), pp. 33-36. (Intervento presentato al convegno SISPAD 2010 tenutosi a Bologna nel 6-8 settembre 2010) [10.1109/sispad.2010.5604580].

Modeling of thin-film Cu(In,Ga)Se2 solar cells

TRONI, Fabrizio;SOZZI, Giovanna;MENOZZI, Roberto
2010-01-01

Abstract

We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.
2010
978-142447699-2
Modeling of thin-film Cu(In,Ga)Se2 solar cells / Troni, Fabrizio; F., Dodi; Sozzi, Giovanna; Menozzi, Roberto. - (2010), pp. 33-36. (Intervento presentato al convegno SISPAD 2010 tenutosi a Bologna nel 6-8 settembre 2010) [10.1109/sispad.2010.5604580].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2324543
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