We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.
|Titolo:||Modeling of thin-film Cu(In,Ga)Se2 solar cells|
|Data di pubblicazione:||2010|
|Appare nelle tipologie:||4.1b Atto convegno Volume|