We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.
Modeling of thin-film Cu(In,Ga)Se2 solar cells / Troni, Fabrizio; F., Dodi; Sozzi, Giovanna; Menozzi, Roberto. - (2010), pp. 33-36. (Intervento presentato al convegno SISPAD 2010 tenutosi a Bologna nel 6-8 settembre 2010) [10.1109/sispad.2010.5604580].
Modeling of thin-film Cu(In,Ga)Se2 solar cells
TRONI, Fabrizio;SOZZI, Giovanna;MENOZZI, Roberto
2010-01-01
Abstract
We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.