IRIS
MENOZZI, Roberto
 Distribuzione geografica
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Continente #
NA - Nord America 4.270
EU - Europa 3.806
AS - Asia 2.094
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 2
SA - Sud America 1
Totale 10.195
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Nazione #
US - Stati Uniti d'America 4.173
CN - Cina 1.700
IE - Irlanda 811
SE - Svezia 635
FI - Finlandia 583
UA - Ucraina 556
IT - Italia 543
DE - Germania 478
SG - Singapore 179
TR - Turchia 122
CA - Canada 97
GB - Regno Unito 59
VN - Vietnam 44
BE - Belgio 33
AT - Austria 30
NL - Olanda 21
IN - India 16
CZ - Repubblica Ceca 14
EU - Europa 9
RO - Romania 9
SK - Slovacchia (Repubblica Slovacca) 9
JP - Giappone 8
RU - Federazione Russa 8
CI - Costa d'Avorio 7
IR - Iran 7
TW - Taiwan 6
FR - Francia 5
HK - Hong Kong 5
IL - Israele 4
EG - Egitto 2
NG - Nigeria 2
AU - Australia 1
BG - Bulgaria 1
DK - Danimarca 1
EE - Estonia 1
ES - Italia 1
GR - Grecia 1
HR - Croazia 1
HU - Ungheria 1
KH - Cambogia 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
MA - Marocco 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PK - Pakistan 1
PL - Polonia 1
RS - Serbia 1
TN - Tunisia 1
Totale 10.195
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Città #
Dublin 806
Chandler 727
Jacksonville 666
Beijing 378
Ashburn 321
Dearborn 269
Ann Arbor 264
Parma 237
Nanjing 233
Princeton 176
San Mateo 157
Shanghai 117
Guangzhou 114
Singapore 112
Wilmington 112
Izmir 111
Toronto 84
Nanchang 82
Shenyang 78
Helsinki 74
New York 64
Jinan 63
Boardman 60
Kunming 54
Hefei 50
Stuttgart 50
Leesburg 49
Tianjin 48
Des Moines 45
Hebei 45
Jiaxing 45
Dong Ket 44
Grafing 38
Seattle 36
Woodbridge 30
Changsha 28
Brussels 27
Los Angeles 25
Vienna 24
Bremen 23
Milan 23
Dallas 21
Cremona 19
Fremont 19
Norwalk 19
Hangzhou 18
Haikou 16
Rome 16
Houston 15
Modena 15
Zhengzhou 13
Fuzhou 11
Kocaeli 11
Halle 10
Santa Clara 10
Bratislava 9
Piacenza 9
Taiyuan 9
Chengdu 8
Lanzhou 8
Mordano 8
Abidjan 7
Borås 7
Campogalliano 7
Taizhou 7
Auburn Hills 6
Genoa 6
Mestre 6
Monmouth Junction 6
Ningbo 6
Ottawa 6
Prata Di Pordenone 6
Redwood City 6
Rockville 6
San Polo D'enza 6
Sasso Marconi 6
Stockholm 6
Xian 6
Ardabil 5
Bologna 5
Chongqing 5
Düsseldorf 5
Edinburgh 5
Rivergaro 5
Salò 5
Amsterdam 4
Ansbach 4
Jinhua 4
Kyjov 4
Medesano 4
Pune 4
Redmond 4
Reggio Emilia 4
San Giovanni in Croce 4
Scandiano 4
Washington 4
Baotou 3
Bosco Chiesanuova 3
Chiavari 3
El Segundo 3
Totale 6.450
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Nome #
A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers 249
Analysis of Ga grading in CIGS absorbers with different Cu content 205
Development of a PV modules soiling monitoring system for smart maintenance 127
Smart soiling sensor for PV modules 119
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects 106
Designing CIGS solar cells with front-side point contacts 99
In-circuit Shoot-through-based Characterization of SiC MOSFET TSEP Curves for Junction Temperature Estimation 95
PARMA CITTÀ FUTURA VOLUME II Il libro bianco 94
Temperature-dependent breakdown and hot carrier stress of PHEMTs 90
Thermal Design of Power Electronic Devices and Modules 89
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 87
H+ Irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications 86
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: The role of grain-boundary defects 86
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 85
Caratterizzazione dielettrica di film ceramici sottili ad alta frequenza con condensatori interdigitati 83
Impact of compositional grading and overall Cu deficiency on the near-infrared response in Cu(In, Ga)Se2 solar cells 81
Mobilità sostenibile e tecnologie innovative per la città 81
Anomalous overvoltage oscillations in the reverse recovery of power p-i-n diodes: experiments and simulations 80
Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma 80
A new ultra high power silicon p-i-n diode for high frequency application 79
A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells 79
Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime 78
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 78
The role of defects on forward current in 4h-sic p-i-n diodes 77
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs 76
Modeling of a university campus Micro-Grid for optimal planning of renewable generation and storage deployment 75
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 73
Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating 73
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact 73
A new technique to measure the thermal resistance of LDMOS transistors 72
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors 72
Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency 72
A physical model of the behavior of GaAs MESFETs in the linear region 71
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 71
Modular Photovoltaic Inverter with High-Frequency DC/DC Stage Based on Low-Voltage FETs 69
Thermal modeling of high-frequency DC/DC switching modules: electromagnetic and thermal simulation of magnetic components 68
Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells 68
Alkali treatments of Cu(In,Ga)Se2thin-film absorbers and their impact on transport barriers 68
Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance 68
On the effect of deep defects on the Voc deficit in high-GGI CIGS absorbers: A numerical study 67
Thermal characterization and modeling of power hybrid converters for distributed power systems 66
A new silicon resistor technology for very high power snubbers 66
Off-State Breakdown in GaAs Power HFETs 66
Simulazione termoelettrica e prove di vita accelerate di diodi PiN per elevate potenze 64
Power converters for future LHC experiments 64
Investigation of the hot-carrier degradation in Si/SiGe HBT’s by intrinsic low frequency noise source modeling 63
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 63
The Apollo project: LV power supplies for the next high energy physics experiments 63
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 62
Electro-thermal simulation of semiconductor devices and hybrid circuits 62
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances 62
Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification 62
Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFET’s 62
Heat management for power converters in sealed enclosures: A numerical study 62
Physical investigation of trap-related effects in power HFETs and their reliability implications 62
A Test Pattern For Three-Dimensional Latch-up Analysis 61
Light emission in commercial pseudomorphic HEMTs 61
Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer 61
A study of hot electron degradation effects in pseudomorphic HEMTs 60
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 60
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 60
Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects 60
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 60
Energy distribution in hostile environment: power converters and devices 60
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 60
A new method to extract HBT thermal resistance and its temperature and power dependence 59
Three-dimensional finite-element thermal simulation of GaN-based HEMTs 59
Modeling of the impact of boundary conditions on AlGaN/GaN HEMT self heating 59
Latch-up testing in CMOS IC’s 59
On the effect of KInSe2 (KIS) layer on Cu In Ga Se 2 solar cell performance: a numerical study 59
Power distribution architecture for high energy physics hostile environment 59
Compact thermal modeling of GaN-Based Structures using Spice. 58
A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion 58
Lumped-element thermal modeling of SOI FinFETs 58
Thermal modeling of planar transformer for switching power converters 58
The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs 57
DC and RF instability of GaAs-based PHEMTs due to hot electrons 57
Modeling of thin-film Cu(In,Ga)Se2 solar cells 57
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 57
Simulation of the effect of grain-boundaries in backside-passivated CIGS solar cells 57
Dynamic electro-thermal modeling for power device assemblies 57
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 56
Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT’s induced by hot-electrons 56
Self-consistent compact electrical and thermal modeling of power devices including package and heat-sink 56
Device to system-level electro-thermal modeling of GaN HEMTs for power switching 56
New methods for easy DC extraction of the thermal resistance of microwave bipolar and FET devices 55
Off-state breakdown of GaAs PHEMTs: review and new data 55
The effect of hot electron stress on the DC and microwavecharacteristics of AlGaAs/InGaAs/GaAs PHEMTs 55
Experimental application of a novel technique to extract gate bias dependentsource and drain parasitic resistances of GaAs MESFETs 55
The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs 55
Effect of the physical structure on the recovery softness of PIN diodes: experimental and numerical analysis 55
Measurement of the dielectric properties of PZT and ZT at microwave frequencies 55
Small-signal modeling for microwave FET linear circuits based on a genetic algorithm 55
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 54
Finite-element thermal modeling of GaN-based HEMT structures 54
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers 54
Caratterizzazione di HEMT pseudomorfici in condizioni di ionizzazione da impatto e stress da hot-electron 53
Local Power Distribution—A Review of Nanogrid Architectures, Control Strategies, and Converters 53
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments 52
GaN HEMTs for power switching applications: from device to system-level electro-thermal modeling 52
Totale 7.065
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Categoria #
all - tutte 37.010
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.010
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.930 0 403 144 15 207 217 275 51 241 157 67 153
2020/20211.251 13 144 98 30 168 57 148 25 277 34 188 69
2021/20221.020 19 24 81 89 49 63 110 137 48 71 59 270
2022/20232.962 372 257 178 212 231 364 18 188 981 16 105 40
2023/20241.103 66 83 26 28 109 255 130 100 33 38 70 165
2024/2025194 145 49 0 0 0 0 0 0 0 0 0 0
Totale 10.456