We show in this work that, although designing AlxGa1-xAs/GaAs HFET's for microwave power applications requires a large barrier layer bandgap (hence x>0.2), the presence of a large concentration of electrically active DX centers in the barrier layer does not hinder the device reliability. The existence of a remarkable quantity of DX centers in the Al0.25Ga0.75As barrier layer is for the first time revealed by means of room temperature electroluminescence, and their concentration is evaluated by measuring the threshold voltage shift induced by hot electron stress at cryogenic temperatures
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications / Menozzi, Roberto; Pavesi, Maura; Manfredi, Manfredo; C., Ghezzi; C., Lanzieri; M., Peroni; C., Canali. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 45:11(1998), pp. 2261-2267. [10.1109/16.726636]
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications
MENOZZI, Roberto;PAVESI, Maura;MANFREDI, Manfredo;
1998-01-01
Abstract
We show in this work that, although designing AlxGa1-xAs/GaAs HFET's for microwave power applications requires a large barrier layer bandgap (hence x>0.2), the presence of a large concentration of electrically active DX centers in the barrier layer does not hinder the device reliability. The existence of a remarkable quantity of DX centers in the Al0.25Ga0.75As barrier layer is for the first time revealed by means of room temperature electroluminescence, and their concentration is evaluated by measuring the threshold voltage shift induced by hot electron stress at cryogenic temperaturesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
