IRIS

MANFREDI, Manfredo

MANFREDI, Manfredo  

Dipartimento di Fisica (attivo dal 01/01/1900 al 25/07/2012)  

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Risultati 1 - 20 di 32 (tempo di esecuzione: 0.019 secondi).
Titolo Data di pubblicazione Autore(i) File
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 1-gen-2009 Pavesi, Maura; F., Rossi; Manfredi, Manfredo; G., Salviati; M., Meneghini; E., Zanoni
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 1-gen-2010 M., Meneghini; A., Tazzoli; E., Ranzato; N., Trivellin; G., Meneghesso; E., Zanoni; Pavesi, Maura; Manfredi, Manfredo; R., Butendeich; U., Zehnder; B., Hahn
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence 1-gen-2000 G., Meneghesso; T., Grave; Manfredi, Manfredo; M., Pavesi; C., Canali; E., Zanoni
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 1-gen-2000 G., Meneghesso; T., Grave; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 1-gen-2004 Manfredi, Manfredo; Pavesi, Maura
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 1-gen-1996 G., Meneghesso; Manfredi, Manfredo; Pavesi, Maura; U., Auer; P., Ellrodt; W., Prost; F. J., Tegude; C., Canali; E., Zanoni
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 1-gen-2009 M., Zanichelli; Pavesi, Maura; A., Zappettini; L., Marchini; N., Auricchio; E., Caroli; Manfredi, Manfredo
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 1-gen-2008 M., Zanichelli; Pavesi, Maura; A., Zappettini; L., Marchini; Manfredi, Manfredo
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 1-gen-2001 N., Armani; A., Chini; Manfredi, Manfredo; G., Meneghesso; Pavesi, Maura; V., Grillo; G., Salviati; E., Zanoni
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 1-gen-2002 N., Armani; Manfredi, Manfredo; Pavesi, Maura; V., Grillo; G., Salviati; A., Chini; G., Meneghesso; E., Zanoni
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 1-gen-1998 G., Meneghesso; A., Di Carlo; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 1-gen-1996 G., Meneghesso; A., Mion; A., Neviani; M., Matloubian; J., Brown; M., Hafizi; T., Liu; C., Canali; Pavesi, Maura; Manfredi, Manfredo; E., Zanoni
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 1-gen-1998 G., Meneghesso; T., Grave; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 1-gen-1994 G., Berthold; E., Zanoni; Manfredi, Manfredo; Pavesi, Maura; C., Canali; J. A., del Alamo; S., Bahl
Electron and hole-related luminescence processes in Gate Injection Transistors 1-gen-2010 Pavesi, Maura; Manfredi, Manfredo; T., Ueda; H., Ishida; T., Tanaka; D., Ueda; G., Meneghesso; E., Zanoni; M., Meneghini; M., Scamperle
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 1-gen-1999 Pavesi, Maura; L., Selmi; Manfredi, Manfredo; E., Sangiorgi; M., Mastrapasqua; J., Bude
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission neasurements 1-gen-1999 M., Pavesi; L., Selmi; Manfredi, Manfredo; E., Sangiorgi; M., Mastrapasqua; J., Bude
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 1-gen-2008 F., Rossi; G., Salviati; Pavesi, Maura; Manfredi, Manfredo; M., Meneghini; E., Zanoni; U., Zehnder
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 1-gen-1997 G., Meneghesso; A., Mion; Y., Haddab; Pavesi, Maura; Manfredi, Manfredo; C., Canali; E., Zanoni
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 1-gen-1998 Menozzi, Roberto; Pavesi, Maura; Manfredi, Manfredo; C., Ghezzi; C., Lanzieri; M., Peroni; C., Canali